Spectrum monitor with memory function circuit

Posted on Mar 28, 2007

Structure and working principle of this circuit is basically the same as the previous circuit, but with some of the components used in the functional minor Ran o First show different bands of the circuit is divided into seven bands, the center frequency of 2.5 octave selection,

Spectrum monitor with memory function circuit

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respectively to 60Hz, 150Hz.400Hz, 1kHz, 2-5 "seven, 6kHz: and 15kHz; the second is the voltage comparator circuit using the LB1404 to replace a two op amp, comparator increases by 8 to 9 comparison, the display matrix consisting of 8 8 variants of 7 9; Third, before the addition of a bandpass filter input amplifier and automatic level control circuit, to overcome the large dark screen phenomenon signals the full screen and small signals. while the addition of a memory selection circuit controlled by the switch, then through the switch when being displayed spectrum is fixed, so that the frequency components of the signal strength and a careful analysis of the signal. whole circuit consists of mixing the input signal amplification, automatic level control, electronic switches, scanning pulse distribution, the band-pass filter and the memory selection circuit and other components. o circuit as shown in Figure 4-64 input mixing circuit. left and right channel input signal from the input terminal, the mixed units resistance Rl, after mixing R2, coupled by the cl to ICI-4 for isolation amplifier o Rl, R2 larger value to reduce the impact on the degree of separation. ICl.4 signal is amplified and divided into two, all the way through the coupling bar, after VDi ,, rDz voltage doubler rectifier and C3 filter, the resulting reflected signal intensity of dc voltage, the VTi Makati to the base, then amplified by the VTi control VTzC-E Q-resistance phase should control the input ICI-4 to the strength of the signal, thereby stabilizing the output level; the other way is added to Icl-L ~ lCl.3, IC2-1 ~ IC2-4 and 7 surrounding the band-pass filter element composed, for division processing the signal voltage output from the band pass filter, subject to rectifying diodes ,, D4 ~ VDio to get the letter reflect the band of the DC voltage signal strength. Since silicon diode turn-on voltage (saying dead) high, in order to overcome the shadow of the dead zone voltage response, the circuit is set dead zone elimination circuit, which consists of Rg and Rose composition, fb is the use of low-frequency germanium transistor eb drop between poles to form a better performance 0,3V stable voltage, in order to reduce the influence of the dead zone voltage silicon diodes. orm action = "/ e / pl / doaction.php" method = "post" name = "saypl" id = "saypl" onsubmit = "return CheckPl (document.saypl)" spectrum displayed is fixed, for frequency component and a careful analysis of the signal strength of the signal. The whole circuit from the mixed input signal amplification, automatic level control, electronic switches, scanning pulse distribution, a bandpass filter and a memory selection circuit. O circuit as shown in Figure 4-64 input mixing circuit. Left and right channel input signal from the input terminal, the mixed units resistance Rl, R2 after mixing, coupled by the cl to ICI-4 for isolation amplifier o Rl, R2 larger value to reduce the impact on the degree of separation. ICl.4 signal is amplified and divided into two, all the way through the bar coupling, VDi ,, rDz voltage doubler rectifier and C3 filter, the resulting reflected signal intensity of dc voltage, the VTi Makati to the base, amplified by the VTi and then ask the control VTzC-E-resistance phase should control the strength of the signal input to the ICI-4, thereby stabilizing the output level; the other way is added to Icl-L ~ lCl.3, IC2-1 IC2 ~ 7 bandpass filter 4, and the composition of the surrounding elements, as the division process. By the signal voltage output from the band pass filter, subject to rectifying diodes ,, D4 ~ VDio to get the letter reflect the band of the DC voltage signal strength. Since silicon diode turn-on voltage (saying dead) high, in order to overcome the shadow of the dead zone voltage response, the circuit is set dead zone elimination circuit, which consists of Rg and f Rose composition, fb is the use of low-frequency germanium transistor eb inter-electrode voltage drop, form a better performance 0,3V voltage stability, to reduce the effect of the dead zone voltage silicon diodes.

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