BAT82

BAT82: Planar Schottky Barrier Diode Technical Summary

Overview

The BAT82 is a high-performance planar Schottky barrier diode designed for applications requiring low forward voltage drop and high breakdown voltage. Encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package, this diode is optimized for surface mounting on a 2 E (5.08 mm) pitch. The inclusion of a guard ring ensures robust protection against electrostatic discharge (ESD), making it suitable for sensitive electronic circuits. Its hermetically-sealed leaded glass construction enhances reliability in harsh environments.

Features

• Low Forward Voltage: Minimizes power loss and improves efficiency in switching applications.
• High Breakdown Voltage: Ensures reliable operation under high reverse bias conditions.
• Guard Ring Protection: Provides enhanced ESD protection, safeguarding the diode from static discharges.
• Hermetically-Sealed Package: The SOD68 (DO-34) leaded glass package offers superior environmental resistance, making it ideal for demanding applications.
• Subminiature Form Factor: Compact design suitable for space-constrained PCB layouts.

Applications

The BAT82 Schottky diode is widely used in various electronic circuits due to its high-speed switching and low power loss characteristics. Key applications include:

• Power Rectification: Efficient conversion of AC to DC in power supplies.
• Voltage Clamping: Protection of sensitive components from voltage spikes.
• Signal Demodulation: High-frequency signal processing in communication systems.
• Reverse Polarity Protection: Safeguarding circuits from incorrect power supply connections.
• Switching Power Supplies: Fast recovery time minimizes switching losses.

Electrical Characteristics

The following table summarizes the key electrical parameters of the BAT82 Schottky diode under typical operating conditions (25°C unless otherwise specified):

• Forward Voltage (VF): 0.55 V at 10 mA
• Reverse Breakdown Voltage (VR): 30 V (minimum)
• Maximum Continuous Forward Current (IF): 50 mA
• Peak Forward Surge Current (IFSM): 1 A (pulse width = 1 s)
• Reverse Leakage Current (IR): 5 µA at 25 V
• Junction Capacitance (CJ): 2 pF at 0 V, 1 MHz
• Operating Temperature Range: -65°C to +150°C

Package Information

The BAT82 is housed in a SOD68 (DO-34) hermetically-sealed leaded glass package, which provides excellent mechanical and environmental protection. Key package details include:

• Package Type: SOD68 (DO-34)
• Dimensions: 3.6 mm (length) x 1.8 mm (diameter)
• Lead Pitch: 5.08 mm (2 E)
• Mounting Style: Through-hole or surface mount (depending on PCB design)
• Material: Leaded glass with hermetic sealing
• Weight: Approximately 0.02 grams

Thermal Characteristics

Proper thermal management is essential for ensuring the longevity and performance of the BAT82 diode. The following thermal parameters are critical for design considerations:

• Thermal Resistance (Junction to Ambient, RθJA): 300°C/W
• Maximum Junction Temperature (Tj): 150°C
• Storage Temperature Range: -65°C to +175°C

Reliability and Compliance

The BAT82 Schottky diode is designed to meet stringent reliability standards and complies with industry regulations. Key certifications and test results include:

• ESD Protection: Passes 2 kV Human Body Model (HBM) per JESD22-A114
• Moisture Sensitivity Level (MSL): Level 1 (unlimited floor life)
• RoHS Compliance: Fully compliant with RoHS Directive 2011/65/EU

Conclusion

The BAT82 planar Schottky barrier diode is a versatile and reliable component suitable for a wide range of applications, from power rectification to signal demodulation. Its low forward voltage, high breakdown voltage, and robust ESD protection make it an excellent choice for designers seeking efficiency and durability. The hermetically-sealed SOD68 package further enhances its suitability for harsh environments, ensuring long-term performance and reliability.