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L271

#L271 #GaAs #infrared emitting diode #remote control #photointerrupter #consumer electronics #industrial applications #liquid phase epitaxy #high pulse handling
L271 GaAs Infrared Emitting Diode Technical Summary

L271 GaAs Infrared Emitting Diode Technical Summary

Overview

The L271 is a high-performance Gallium Arsenide (GaAs) infrared emitting diode designed for applications requiring reliable infrared light emission. Fabricated using a liquid phase epitaxy process, this component offers excellent performance in infrared remote control systems and photointerrupter applications. With its high pulse handling capability and robust construction, the L271 is suitable for both consumer electronics and industrial applications.

This device features long leads for easy mounting and is available in grouped configurations. Its package is compatible with other industry-standard components like the SFH 300 and SFH 203, making it a versatile choice for design engineers.

Key Features

Applications

The L271 is designed for a wide range of infrared applications, including:

Electrical Characteristics

Absolute Maximum Ratings

Recommended Operating Conditions

For optimal performance and longevity, the following operating conditions are recommended:

Optical Characteristics

Package Information

Physical Dimensions

The L271 is packaged in a standard 3mm radial leaded package with the following dimensions (all measurements in millimeters unless otherwise specified):

Mechanical Characteristics

Marking Information

The device is typically marked with the following identification:

Reliability Data

Environmental Specifications

Life Expectancy

When operated within recommended conditions, the L271 demonstrates:

Handling and Mounting Guidelines

Soldering Recommendations

Cleaning Recommendations

Design Considerations

Circuit Design

When designing with the L271, consider the following:

Optical Design

Ordering Information

The L271 is available in several configurations:

Compliance and Certifications

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