The LD271 is a high-performance GaAs (Gallium Arsenide) infrared emitting diode designed for applications requiring reliable infrared light emission. Fabricated using advanced semiconductor technology, this component offers excellent efficiency and stability across a wide operating temperature range. With its compact package and robust construction, the LD271 is suitable for both industrial and commercial applications where consistent infrared output is critical.
This diode emits light in the infrared spectrum, typically around 940nm wavelength, making it ideal for use in remote control systems, optical sensors, and other infrared-based communication devices. The device features low forward voltage and high output power, ensuring energy-efficient operation.
The LD271 infrared emitting diode is suitable for a wide range of applications including:
The following table outlines the key electrical characteristics of the LD271 at 25°C unless otherwise specified:
The LD271 offers excellent optical performance characteristics:
The LD271 is available in a standard 3mm radial leaded package with the following dimensions:
The LD271 has undergone extensive reliability testing with the following results:
When designing with the LD271, consider the following:
The LD271 is available in several packaging options: