29F200

M29F200B 2 Mbit (256Kb x8 or 128Kb x16) Flash Memory

Overview

The M29F200B is a high-performance 2 Mbit non-volatile Flash memory device organized as either 256Kb x8 or 128Kb x16. Manufactured using advanced CMOS technology, it provides reliable data storage with fast access times, making it suitable for embedded systems requiring firmware or parameter storage. The device operates on a single 5V power supply and features a flexible sector architecture for efficient memory management.

Key Features

• Memory Organization: Configurable as 256K x8 or 128K x16
• High-Speed Performance: Access times as fast as 70ns
• Flexible Sector Architecture:
  • Eight 16Kb sectors
  • One 32Kb sector
  • Seven 64Kb sectors
• Low Power Consumption:
  • 30mA active read current (typical)
  • 1μA standby current (typical)
• Extended Temperature Range: -40°C to +85°C operation
• Reliable Data Retention: Minimum 20 years
• Hardware Data Protection:
  • V_CC power-on/power-off detection
  • Program/erase voltage detection

Applications

The M29F200B is designed for use in a wide range of electronic systems requiring non-volatile storage:

• Embedded Systems: Firmware storage for microcontrollers
• Automotive Electronics: Engine control units, instrument clusters
• Industrial Control Systems: Program storage for PLCs
• Telecommunications Equipment: Configuration data storage
• Consumer Electronics: Set-top boxes, gaming systems
• Medical Devices: Parameter storage for diagnostic equipment

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (V_CC): -0.5V to +7.0V
• Input Voltage: -0.5V to V_CC + 0.5V
• Operating Temperature Range: -40°C to +85°C
• Storage Temperature Range: -65°C to +150°C

DC Characteristics (T_A = 25°C, V_CC = 5V ±10%)

• Supply Current (Read): 30mA max (at 5MHz)
• Supply Current (Program/Erase): 50mA max
• Standby Current: 1μA max (CMOS level inputs)
• Input Leakage Current: ±1μA max
• Output Leakage Current: ±1μA max

AC Characteristics

• Address Access Time: 70ns max
• Chip Enable Access Time: 70ns max
• Output Enable Access Time: 30ns max
• Write Pulse Width: 45ns min
• Byte Program Time: 20μs typical
• Sector Erase Time: 1s typical
• Chip Erase Time: 10s typical

Package Information

The M29F200B is available in multiple industry-standard packages:

TSOP (Thin Small Outline Package)

• Package Type: 48-pin TSOP (12x20mm)
• Pitch: 0.5mm
• Height: 1.2mm max
• Moisture Sensitivity Level (MSL): 3

PLCC (Plastic Leaded Chip Carrier)

• Package Type: 44-pin PLCC
• Body Size: 16.6x16.6mm
• Lead Pitch: 1.27mm
• Moisture Sensitivity Level (MSL): 3

BGA (Ball Grid Array)

• Package Type: 48-ball BGA (6x8mm)
• Ball Pitch: 0.75mm
• Height: 1.2mm max
• Moisture Sensitivity Level (MSL): 3

Programming and Erasure

The M29F200B supports both byte/word programming and sector erase operations:

• Programming Algorithm: Automatic programming with internal verify
• Erase Suspend/Resume: Allows reading from other sectors during erase
• Status Detection:
  • Data polling for program completion
  • Toggle bit for erase completion
• Endurance: Minimum 100,000 program/erase cycles per sector

Quality and Reliability

The M29F200B meets stringent quality and reliability standards:

• ESD Protection: >2000V (Human Body Model)
• Latch-up Protection: >100mA
• Data Retention: 20 years minimum at 85°C
• Production Testing: 100% tested for program/erase functionality

Ordering Information

The device is available with different speed grades and package options:

• M29F200BT70: 70ns access time, TSOP package
• M29F200BB70: 70ns access time, PLCC package
• M29F200BN70: 70ns access time, BGA package
• M29F200BT90: 90ns access time, TSOP package