HB52F649E1 Technical Summary

HB52F649E1 - 64M × 72 × 1-Bank Synchronous Dynamic RAM Registered Module

Overview

The HB52F649E1 is an advanced 8-byte DIMM (Dual In-line Memory Module) designed as an optimized main memory solution for 8-byte processor applications. This module integrates high-density memory components and supporting circuitry to deliver reliable performance in demanding computing environments.

This registered module features a 64M × 72 × 1-bank configuration with ECC (Error Correction Code) support, making it suitable for applications requiring high reliability and data integrity. The module is constructed using 18 pieces of 256-Mbit SDRAM (HM5225405BTT) in TSOP packages, complemented by a PLL clock driver, register drivers, and a serial EEPROM for Presence Detect functionality.

Key Features

JEDEC Standard Compliance: Fully compatible with JEDEC standard outline for 8-byte DIMM modules
Package: 168-pin socket type package with dual lead out configuration
Dimensions: 133.35 mm (Length) × 43.18 mm (Height) × 4.00 mm (Thickness)
Power Supply: 3.3V operation
High-Speed Operation: Maximum clock frequency of 133 MHz
Interface: LVTTL compatible
Data Width: ×72 ECC configuration for error detection and correction
Advanced Memory Architecture: Single pulsed RAS with 4 independently operating banks
Flexible Operation Modes: Supports burst read/write and burst read/single write operations
Programmable Features: Burst length (1/2/4/8) and burst sequence (sequential/interleave)
Refresh Options: Supports both auto refresh and self refresh modes with 8192 refresh cycles per 64ms

Applications

The HB52F649E1 is designed for use in high-performance computing systems where reliability and data integrity are critical:

Enterprise servers and workstations
High-availability computing systems
Data center equipment
Telecommunications infrastructure
Mission-critical industrial computing
High-performance computing clusters

The ECC capability makes this module particularly suitable for applications where data corruption cannot be tolerated, such as financial systems, medical equipment, and scientific computing.

Electrical Characteristics

Absolute Maximum Ratings

Supply Voltage: -0.5V to +4.6V
Input Voltage: -0.5V to VDD + 0.5V
Operating Temperature: 0°C to +70°C (commercial grade)
Storage Temperature: -55°C to +125°C

Recommended Operating Conditions

Supply Voltage: 3.3V ±0.3V
Clock Frequency: Up to 133 MHz
CAS Latency: Programmable to 4 cycles
Input High Voltage: 2.0V min (VDD = 3.3V)
Input Low Voltage: 0.8V max (VDD = 3.3V)

Power Consumption

Active Current: TBD mA typical (varies based on operating mode)
Standby Current: TBD mA typical
Self Refresh Current: TBD mA typical

Package Information

Physical Specifications

Package Type: 168-pin socket type (dual lead out)
Pin Pitch: 1.27 mm
Module Dimensions: 133.35 mm × 43.18 mm × 4.00 mm
Contact Material: Gold-plated pins for reliable connection
Weight: Approximately 25g (typical)

Pin Configuration

The 168-pin configuration provides a balanced layout for signal integrity and power distribution:

Pins 1-84 on the front side
Pins 85-168 on the back side
Key pin positions: 1, 10, 11, 40, 41, 84, 85, 94, 95, 124, 125, 168

The pin arrangement follows standard DIMM configuration with dedicated pins for address, data, control signals, power, and ground.

Ordering Information

The HB52F649E1 is available in the following configuration:

Type No.: HB52F649E1-75B
Frequency: 133 MHz operation
CAS Latency: 4 cycles
Package: 168-pin dual lead out socket type
Contact Pad: Gold plating for enhanced conductivity and corrosion resistance

Design Considerations

Thermal Management

The module includes decoupling capacitors mounted beside each TSOP package to ensure stable operation. For applications requiring extended temperature operation or high reliability, consider: