HB56UW1673E

HB56UW1673E 16M × 72 EDO DRAM Module Technical Summary

Overview

The HB56UW1673E is a high-performance 16M × 72-bit Extended Data Out (EDO) Dynamic RAM Module designed as an optimized main memory solution for 4-byte and 8-byte processor applications. This module combines 18 pieces of 64-Mbit DRAM (HM5165405) in TSOP packages with 2 pieces of 16-bit line drivers in TSSOP packages to deliver a robust memory solution. The 168-pin socket type package with dual lead-out configuration enables high-density mounting without requiring surface mount technology. With EDO Page Mode capability, this module provides enhanced performance for memory-intensive applications.

Key Features

• 168-pin Dual Lead-Out Package - 1.27 mm lead pitch for reliable socket mounting
• Single 3.3V Power Supply - Operates at 3.3V ± 0.3V for low-power operation
• High-Speed Performance:
  • Access time (tRAC): 50 ns/60 ns (max)
  • Access time (tCAC): 18 ns/20 ns (max)
• Low Power Consumption:
  • Active mode: 8.46 W/7.16 W (max)
  • Standby mode (TTL): 166 mW (max)
• Buffered Inputs - All inputs except RAS and DQ are buffered for improved signal integrity
• 4-Byte Interleave Support - Dual address input (A0/B0) enabled for HB56UW1673E-F variant
• JEDEC Standard Compliant - Buffered 8-byte DIMM configuration
• EDO Page Mode Capability - Enhances sequential data access performance
• Refresh Management:
  • 4096 refresh cycles within 64 ms
  • Supports both RAS-only refresh and CAS-before-RAS refresh modes

Applications

The HB56UW1673E is designed for use in systems requiring high-density, high-performance memory solutions. Typical applications include:

• Workstations and high-performance computing systems
• Network servers and data center equipment
• Telecommunications infrastructure
• Industrial computing systems
• Legacy system upgrades and maintenance
• Embedded systems requiring large memory capacity

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (VCC): -0.5V to +4.6V
• Input Voltage (VI): -0.5V to VCC + 0.5V
• Operating Temperature: 0°C to +70°C
• Storage Temperature: -55°C to +125°C

Recommended Operating Conditions

• Supply Voltage (VCC): 3.3V ± 0.3V
• Input High Voltage (VIH): 2.0V min
• Input Low Voltage (VIL): 0.8V max
• Operating Temperature Range: 0°C to +70°C

DC Characteristics

• Input Leakage Current (II): ±10 μA max
• Output Leakage Current (IOZ): ±10 μA max
• Input Capacitance (CIN): 5 pF max
• Output Capacitance (COUT): 8 pF max

AC Characteristics

• RAS Access Time (tRAC): 50 ns/60 ns max
• CAS Access Time (tCAC): 18 ns/20 ns max
• RAS Precharge Time (tRP): 20 ns min
• CAS Precharge Time (tCP): 20 ns min
• Write Pulse Width (tWP): 20 ns min
• Address Setup Time (tAS): 0 ns min
• Address Hold Time (tAH): 10 ns min

Package Information

The HB56UW1673E is packaged in a 168-pin dual lead-out socket type package with the following specifications:

• Package Type: 168-pin DIMM socket type
• Lead Pitch: 1.27 mm
• Module Dimensions: Standard JEDEC outline for 8-byte DIMM
• Component Mounting:
  • 18 × 64-Mbit DRAM in TSOP packages
  • 2 × 16-bit line drivers in TSSOP packages
  • Decoupling capacitors mounted beside each TSOP

Ordering Information

Design Considerations

When implementing the HB56UW1673E in system designs, consider the following:

• Proper power supply decoupling is critical for optimal performance
• The module includes onboard decoupling capacitors for each DRAM device
• Signal integrity should be maintained for all address and control lines
• Thermal management should be considered for high-utilization applications
• The module supports both 4-byte and 8-byte processor configurations
• Refresh timing must be maintained according to specifications

Reliability and Quality

The HB56UW1673E meets stringent quality and reliability standards:

• JEDEC standard compliant design and manufacturing
• Comprehensive component-level testing
• Module-level functional testing
• Extended temperature range testing
• Burn-in testing available for high-reliability applications