HM5113805

Technical Summary: Hitachi HM5113805F 128M-bit Dynamic RAM

Overview

The Hitachi HM5112805F and HM5113805F are high-performance 128M-bit dynamic RAMs (DRAMs) organized as 16,777,216 words × 8 bits. These components leverage advanced CMOS process technology to deliver a balance of speed and power efficiency. Designed for applications requiring reliable memory solutions, these DRAMs support Extended Data Out (EDO) Page Mode for high-speed access. The HM5113805F variant is optimized for low-power operation, making it suitable for battery-backed or portable applications.

Features

• Single 3.3V Power Supply: Operates at 3.3V ± 0.3V, ensuring compatibility with modern low-voltage systems.
• High-Speed Access: Maximum access time of 60 ns, enabling efficient data retrieval.
• Low Power Consumption:
  • Active Mode:
    • 720 mW (max) for HM5112805F
    • 792 mW (max) for HM5113805F
  • Standby Mode:
    • 3.6 mW (max) with CMOS interface
    • 1.8 mW (max) for L-version with CMOS interface
• EDO Page Mode: Enhances data throughput by allowing consecutive accesses within the same page without repeated column addressing.
• Flexible Refresh Options:
  • RAS-only refresh: 8192 cycles/64 ms (HM5112805F), 4096 cycles/64 ms (HM5113805F)
  • CAS-before-RAS (CBR) refresh: 4096 cycles/64 ms for both variants
  • Hidden refresh and self-refresh (L-version) for reduced power consumption.
• Battery Backup Operation: Supported in the L-version for applications requiring persistent memory during power loss.

Applications

The HM5113805F is designed for a broad range of applications, including but not limited to:

• Embedded Systems: Provides reliable memory for microcontrollers and system-on-chip (SoC) designs.
• Consumer Electronics: Used in digital TVs, set-top boxes, and gaming consoles where low power and high speed are critical.
• Industrial Automation: Suitable for control systems and data loggers requiring robust memory performance.
• Portable Devices: The L-version's low standby power makes it ideal for battery-operated devices like handheld meters and medical equipment.
• Telecommunications: Supports buffering and temporary storage in networking hardware.

Electrical Characteristics

The following table summarizes key electrical specifications for the HM5113805F:

• Supply Voltage (V_CC): 3.3V ± 0.3V
• Operating Temperature Range: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)
• Input/Output Logic Levels: TTL-compatible
• Refresh Requirements:
  • RAS-only refresh: 8192 cycles (HM5112805F), 4096 cycles (HM5113805F) every 64 ms
  • CBR refresh: 4096 cycles every 64 ms
• Data Retention: Guaranteed in battery backup mode (L-version).

Package Information

The HM5113805F is available in industry-standard packages to facilitate easy integration into various designs. Key package details include:

• Package Type: 400-mil SOJ (Small Outline J-lead) or TSOP (Thin Small Outline Package)
• Pin Count: 32 pins (standard configuration)
• Dimensions:
  • SOJ: 20.95 mm × 10.16 mm (body dimensions)
  • TSOP: 18.4 mm × 10.16 mm (body dimensions)
• Mounting Style: Surface-mount technology (SMT) for high-density PCB layouts.

Ordering Information

The HM5113805F is available in multiple variants to suit different application requirements. Below is a breakdown of ordering options:

• Standard Version: HM5113805F (no suffix)
• Low-Power (L) Version: HM5113805F-L (supports self-refresh and battery backup)
• Speed Variants:
  • HM5113805F-60: 60 ns access time
  • HM5113805F-70: 70 ns access time (if applicable)

Conclusion

The Hitachi HM5113805F 128M-bit DRAM is a versatile and efficient memory solution for modern electronic systems. With its low power consumption, flexible refresh modes, and support for high-speed EDO page mode, it is well-suited for applications ranging from consumer electronics to industrial automation. The availability of multiple package options and variants ensures compatibility with diverse design requirements.