HM5212805F

HM5212805F - 128-Mbit SDRAM Technical Summary

Overview

The Hitachi HM5212805F is a high-performance 128-Mbit Synchronous DRAM (SDRAM) organized as 4,194,304 words × 8 bits × 4 banks. This component is designed for applications requiring high-speed data transfer and efficient memory management. With its 3.3V power supply and LVTTL interface, it is suitable for a wide range of computing and embedded systems. The HM5212805F operates with a maximum clock frequency of 133 MHz (or 100 MHz depending on the variant) and supports advanced features such as programmable burst lengths, multiple refresh modes, and independent bank operation.

This SDRAM is packaged in a standard 54-pin plastic TSOP II package, making it suitable for space-constrained applications. All inputs and outputs are synchronized to the rising edge of the clock, ensuring reliable data transfer in high-speed systems.

Features

• Memory Organization: 128-Mbit (4,194,304 words × 8 bits × 4 banks)
• Power Supply: 3.3V ± 0.3V
• Clock Frequency: Up to 133 MHz (HM5212805F-75) or 100 MHz (HM5212805F-A60/B60)
• Interface: LVTTL-compatible inputs and outputs
• Bank Architecture: 4 independent banks for concurrent operation
• Burst Modes:
  • Burst read/write and burst read/single write operations
  • Programmable burst length: 1, 2, 4, 8, or full page
  • Two burst sequence options: Sequential (all lengths) or Interleave (1/2/4/8)
• CAS Latency: Programmable to 2 or 3 clock cycles
• Data Control: Byte control via DQM (Data Input/Output Mask)
• Refresh Modes:
  • Auto refresh and self refresh options
  • 4096 refresh cycles required every 64ms
• Package: 54-pin plastic TSOP II (Type II)

Applications

The HM5212805F is designed for use in a variety of high-performance computing and embedded applications including:

• Desktop and laptop computer memory systems
• Workstations and servers
• Networking equipment (routers, switches)
• Telecommunications infrastructure
• High-performance embedded systems
• Graphics cards and display subsystems
• Industrial control systems
• Automotive infotainment systems

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (VDD/VDDQ): -0.5V to +4.6V
• Input Voltage (VI): -0.5V to VDDQ + 0.5V
• Output Voltage (VO): -0.5V to VDDQ + 0.5V
• Operating Temperature: 0°C to +70°C (commercial) or -40°C to +85°C (industrial)
• Storage Temperature: -55°C to +150°C

Recommended Operating Conditions

• Supply Voltage (VDD/VDDQ): 3.3V ± 0.3V
• Input High Voltage (VIH): 2.0V min (VDDQ = 3.0V to 3.6V)
• Input Low Voltage (VIL): 0.8V max (VDDQ = 3.0V to 3.6V)
• Operating Temperature Range:
  • Commercial: 0°C to +70°C
  • Industrial: -40°C to +85°C

DC Characteristics

• Input Leakage Current (II): ±1 μA max
• Output Leakage Current (IOZ): ±1 μA max
• Operating Current (IDD): 120 mA max (133 MHz operation)
• Standby Current (ISB): 20 mA max (LVTTL inputs)
• Self Refresh Current (ISB): 400 μA max

AC Characteristics (133 MHz Operation)

• Clock Cycle Time (tCK): 7.5 ns min
• CAS Latency: 2 or 3 clock cycles (programmable)
• Access Time from Clock (tAC): 5.4 ns max
• Address Setup Time (tAS): 1.5 ns min
• Address Hold Time (tAH): 0.8 ns min
• Data-in Setup Time (tDS): 1.5 ns min
• Data-in Hold Time (tDH): 0.8 ns min

Package Information

The HM5212805F is available in a 54-pin plastic TSOP II (Thin Small Outline Package Type II) with the following dimensions:

• Package Type: 54-pin TSOP II
• Package Code: PT54C
• Body Size: 22.22 mm × 10.16 mm (nominal)
• Lead Pitch: 0.8 mm
• Lead Count: 54 (27 leads per side)
• Lead Width: 0.22 mm nominal
• Lead Length: 0.95 mm nominal
• Package Height: 1.2 mm max

Ordering Information

The HM5212805F is available in different speed grades and temperature ranges:

• HM5212805F-75: 133 MHz operation, commercial temperature range (0°C to +70°C)
• HM5212805F-A60: 100 MHz operation, commercial temperature range (0°C to +70°C)
• HM5212805F-B60: 100 MHz operation, industrial temperature range (-40°C to +85°C)

Functional Description

The HM5212805F operates with a synchronous interface where all signals are registered on the positive edge of the clock signal. The device features four independently controlled memory banks that allow for concurrent operation, improving overall memory bandwidth.

The SDRAM supports multiple burst modes with programmable lengths (1, 2, 4, 8, or full page) and sequences (sequential or interleaved). The CAS latency is programmable to either 2 or 3 clock cycles, allowing system designers to optimize performance based on their specific requirements.

Refresh operations can be performed either through auto refresh commands from the memory controller or through self refresh mode, where the device internally manages refresh operations while maintaining data integrity. The device requires 4096 refresh cycles every 64ms to maintain data.

Data masking is implemented through the DQM (Data Input/Output Mask) pin, which allows