HM5225325F - 256-Mbit SDRAM Technical Summary

Overview

The Hitachi HM5225325F is a high-performance 256-Mbit Synchronous DRAM (SDRAM) organized as 2097152-word × 32-bit × 4-bank memory device. This component offers a high-speed, low-power memory solution for a wide range of applications. All inputs and outputs are synchronized with the rising edge of the clock input, providing reliable data transfer. The device comes in a compact 108-bump Ball Grid Array (BGA) package with a 1.27 mm pitch, making it suitable for space-constrained applications.

Features

• Memory Organization: 2097152 words × 32 bits × 4 banks
• Power Supply: 3.3 V ± 0.3 V
• Clock Frequency: Up to 100 MHz maximum
• Interface: LVTTL compatible
• Package: 108-bump BGA (BP-108) with 1.27 mm pitch
• Bank Operation: Four independent banks supporting simultaneous operation
• Burst Operations:
  • Burst read/write operation
  • Burst read/single write operation
• Programmable Burst Length: 4, 8, or full page
• Burst Sequence Options:
  • Sequential (for burst lengths of 4, 8, or full page)
  • Interleave (for burst lengths of 4 or 8)
• CAS Latency: Programmable to 2 or 3 clock cycles
• Byte Control: Supported via DQMB pins
• Refresh Features:
  • 4096 refresh cycles every 64 ms
  • Auto refresh and self refresh modes
• Full Page Burst Capability: With burst stop functionality

Applications

The HM5225325F is designed for use in a variety of high-performance electronic systems requiring reliable, high-speed memory. Typical applications include:

• Computer systems and workstations
• Networking equipment (routers, switches)
• Telecommunications infrastructure
• Embedded systems
• Graphics and video processing
• Industrial control systems
• Consumer electronics requiring high-density memory

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (V_DD): -0.5 V to +4.6 V
• Input Voltage (V_IN): -0.5 V to V_DD + 0.5 V
• Output Voltage (V_OUT): -0.5 V to V_DD + 0.5 V
• Operating Temperature: 0°C to +70°C (commercial)
• Storage Temperature: -55°C to +125°C

Recommended Operating Conditions

• Supply Voltage (V_DD): 3.3 V ± 0.3 V
• Input High Voltage (V_IH): 2.0 V min
• Input Low Voltage (V_IL): 0.8 V max
• Operating Temperature: 0°C to +70°C

DC Characteristics

• Input Leakage Current (I_IN): ±1 μA max
• Output Leakage Current (I_OUT): ±1 μA max
• Operating Current (I_DD): 120 mA typical at 100 MHz
• Standby Current (I_SB): 20 mA typical
• Self Refresh Current (I_SR): 2 mA typical

AC Characteristics

• Clock Cycle Time (t_CK): 10 ns min (100 MHz)
• CAS Latency: 2 or 3 clock cycles
• Access Time (t_AC): 5.4 ns max
• Address Setup Time (t_AS): 1.5 ns min
• Address Hold Time (t_AH): 0.8 ns min
• Data Setup Time (t_DS): 1.5 ns min
• Data Hold Time (t_DH): 0.8 ns min

Package Information

BGA-108 Package Details

• Package Type: BP-108 (108-ball BGA)
• Ball Pitch: 1.27 mm
• Package Dimensions: 13 mm × 13 mm body size
• Ball Arrangement: 12 × 9 array (108 balls total)
• Ball Material: Lead-free solder balls
• Package Height: 1.2 mm typical

Pin Configuration

The 108-ball BGA package includes the following key signal groups:

• Power Pins: V_DD, V_DDQ, V_SS
• Clock Input: CLK
• Clock Enable: CKE
• Chip Select: CS
• Bank Address: BA0, BA1
• Row/Column Address: A0-A11
• Data I/O: DQ0-DQ31
• Data Mask: DQM0-DQM3
• Write Enable: WE
• RAS/CAS: RAS, CAS

Ordering Information

The HM5225325F is available in the following standard configurations:

• HM5225325F-B60: Commercial temperature range (0°C to +70°C), 100 MHz operation

Custom configurations may be available upon request for high-volume orders.

Conclusion

The Hitachi HM5225325F 256-Mbit SDRAM offers a high