HM5264165
#SDRAM
#64-Mbit
#HM5264165
#synchronous DRAM
#memory management
#3.3V
#LVTTL
#high-speed data transfer
HM5264165 Series 64-Mbit SDRAM Technical Summary
Overview
The Hitachi HM5264165 series comprises high-performance 64-Mbit Synchronous DRAM (SDRAM) devices designed for applications requiring high-speed data transfer and efficient memory management. The series includes three variants with different word configurations: HM5264165F (1M x 16-bit), HM5264805F (2M x 8-bit), and HM5264405F (4M x 4-bit), all organized with 4 independent memory banks. These devices operate with a 3.3V power supply and feature LVTTL interfaces, making them compatible with modern low-voltage systems.
All variants in the HM5264165 series utilize a synchronous interface where all inputs and outputs are referenced to the rising edge of the clock signal. The devices are packaged in a space-efficient 54-pin plastic TSOP II package, suitable for high-density PCB layouts.
Features
- Memory Organization:
- HM5264165F: 1,048,576 words × 16-bit × 4 banks
- HM5264805F: 2,097,152 words × 8-bit × 4 banks
- HM5264405F: 4,194,304 words × 4-bit × 4 banks
- Performance:
- 3.3V ± 0.3V power supply
- Maximum clock frequency: 133 MHz (HM5264165F-75) or 100 MHz (HM5264165F-60)
- LVTTL-compatible interface
- Advanced Memory Control:
- Single pulsed RAS interface
- Four independently operated banks
- Programmable burst lengths: 1, 2, 4, 8, or full page
- Two burst sequence modes: Sequential (all burst lengths) and Interleave (BL=1/2/4/8)
- Read/Write Flexibility:
- Burst read/write and burst read/single write operation capability
- Programmable CAS latency: 2 or 3 cycles
- Byte control via DQM (for x8/x4 versions) or DQMU/DQML (for x16 version)
- Refresh Options:
- 4096 refresh cycles every 64ms
- Auto refresh and self refresh modes
Applications
The HM5264165 series is designed for use in a wide range of electronic systems requiring high-speed, high-density memory:
- Computer systems and peripherals
- Networking equipment (routers, switches)
- Telecommunications infrastructure
- Consumer electronics (HDTVs, set-top boxes)
- Industrial control systems
- Embedded systems requiring synchronous memory
- Graphics and video processing applications
Electrical Characteristics
Absolute Maximum Ratings
- Supply Voltage (VDD, VDDQ): -0.5V to +4.6V
- Input Voltage (VI): -0.5V to VDDQ + 0.5V
- Output Voltage (VO): -0.5V to VDDQ + 0.5V
- Operating Temperature Range: 0°C to +70°C
- Storage Temperature Range: -55°C to +125°C
Recommended Operating Conditions
- Supply Voltage (VDD, VDDQ): 3.3V ± 0.3V
- Input High Voltage (VIH): 2.0V min (VDDQ = 3.0V)
- Input Low Voltage (VIL): 0.8V max (VDDQ = 3.0V)
- Operating Temperature: Commercial (0°C to +70°C)
DC Characteristics
- Input Leakage Current (II): ±1μA max
- Output Leakage Current (IOZ): ±1μA max
- Operating Current (IDD): 120mA max (133MHz operation)
- Standby Current (ISB): 20mA max (LVTTL inputs)
- Self Refresh Current (ISSR): 2mA max
AC Characteristics
- Clock Cycle Time (tCK): 7.5ns min (133MHz), 10ns min (100MHz)
- CAS Latency: 2 or 3 clock cycles (programmable)
- Access Time from Clock (tAC): 5.4ns max (133MHz)
- Address Setup Time (tAS): 1.5ns min
- Address Hold Time (tAH): 0.8ns min
- Data-in Setup Time (tDS): 1.5ns min
- Data-in Hold Time (tDH): 0.8ns min
Package Information
54-pin Plastic TSOP II
- Package Dimensions: 22.2mm × 10.2mm × 1.2mm (typical)
- Pin Pitch: 0.8mm
- Lead Count: 54
- Lead Material: Copper alloy
- Lead Finish: Matte tin
- Package Weight: 0.35g (typical)
- Moisture Sensitivity Level (MSL): 3 (168 hours floor life)
Pin Configuration
The 54-pin TSOP II package includes the following signal groups:
- Power Supplies: VDD, VDDQ, VSS, VSSQ
- Clock Input: CLK
- Bank Address Inputs: BA0, BA1
- Address Inputs: A0-A11
- Control Inputs: /CS, /RAS, /CAS, /WE, CKE
- Data I/O: DQ0-DQ15 (for x16), DQ0-DQ7 (for x8), DQ0-DQ3 (for x4)
- Data Mask: DQM (for x8/x4), DQMU/DQML (for x16)
- No Connect: NC
Ordering Information
The HM5264165 series is available in different speed grades and configurations:
- HM5264165F-75: 133MHz operation, 1M × 16 organization
- HM5264165F-60: 100MHz operation, 1M × 16 organization
- HM5264805F-75: 133MHz operation, 2M × 8 organization
- HM5264805F-60: 100MHz operation, 2M × 8 organization
- HM5264405F-75: 133MHz operation, 4M × 4 organization
- HM5264405F-60: 100MHz operation, 4M × 4 organization
K4E640411C
FUNCTIONAL BLOCK DIAGRAM Note) *1 : 4K Refresh
• Performance Range Speed…
HB54A2569
The HB54A2569F1 is a 32M × 72 × 1-bank Double Data Rate (DDR) SDRAM Module, mounted 9 pieces of
256-Mbit DDR SDRAM (HM5425801BTT) sealed in TSOP package, 1 piece of PLL clock driver, 2 pieces
of regis…
HM5112805
The Hitachi HM5112805F, HM5113805F are 128M-bit dynamic RAMs organized as 16,777,216-word ×
8-bit. They have realized high performance and low power by employing CMOS process technology.
HM5112805F, H…
HM5425801B
The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM
devices. Read and write operations are performed at the cross points of the CLK and the CLK. This high
speed data…
HB52R329
The HB52R329E22 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed
as an optimized main memory solution for 8-byte processor applications. The HB52R329E22 is a 16M × 7…
HM5264405
The Hitachi HM5264165F is a 64-Mbit SDRAM organized as 1048576-word × 16-bit × 4 bank. The Hitachi HM5264805F is a 64-Mbit SDRAM organized as 2097152-word × 8-bit × 4 bank. The Hitachi HM5264405F
is…