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K4E660411C

#DRAM #EDO Mode #16Mx4 #memory #Samsung #CMOS #high bandwidth #low power consumption #computing #embedded systems
Here is a professional, thorough, and detailed HTML-formatted technical summary for the **K4E660411C** component: ```html Technical Summary: K4E660411C 16Mx4 EDO Mode DRAM

Technical Summary: K4E660411C 16Mx4 EDO Mode DRAM

Overview

The K4E660411C is a high-performance 16Mx4 Extended Data Out (EDO) Mode Dynamic Random-Access Memory (DRAM) component, fabricated using Samsung's advanced CMOS process. This device is designed to deliver high bandwidth and low power consumption, making it suitable for a wide range of computing and embedded applications. The K4E660411C features multiple refresh modes, including CAS-before-RAS (CBR) refresh, RAS-only refresh, and Hidden refresh, ensuring efficient memory management and data retention.

With its 4K refresh capability, this DRAM family is optimized for systems requiring reliable and high-speed memory access. The EDO mode enhances performance by allowing data to be held valid after the column address strobe (CAS) signal is deasserted, thereby improving the memory access cycle time.

Features

Applications

The K4E660411C is suitable for a variety of applications, including but not limited to:

Electrical Characteristics

Absolute Maximum Ratings

Recommended Operating Conditions

DC Characteristics

AC Characteristics

Package Information

Physical Dimensions

The K4E660411C is available in a standard 400mil SOJ (Small Outline J-Lead) package. Key dimensions include:

Pin Configuration

The pinout for the K4E660411C is as follows:

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