K4F661611C - 4Mx16 Fast Page Mode DRAM

Overview

The K4F661611C is a high-performance 4Mx16 Fast Page Mode Dynamic Random-Access Memory (DRAM) component fabricated using Samsung's advanced CMOS process. This device is designed to deliver high bandwidth, low power consumption, and high reliability, making it suitable for a wide range of computing and embedded applications. The K4F661611C supports multiple refresh modes, including CAS-before-RAS, RAS-only, and Hidden refresh, ensuring efficient memory management and data retention.

This DRAM is compatible with TTL (5.0V) logic levels and adheres to JEDEC standard pinout configurations. It is available in a Plastic TSOP(II) package, making it suitable for space-constrained applications.

Features

• Fast Page Mode Operation: Enables faster access to data within the same row by reducing cycle times.
• 2CAS Byte/Word Read/Write Operation: Supports flexible data access in byte or word configurations.
• CAS-before-RAS Refresh Capability: Simplifies refresh control by allowing column address strobe (CAS) to precede row address strobe (RAS).
• RAS-only and Hidden Refresh Capability: Provides additional refresh modes for power efficiency and performance optimization.
• Fast Parallel Test Mode Capability: Facilitates rapid testing during manufacturing and quality assurance.
• TTL (5.0V) Compatible Inputs and Outputs: Ensures seamless integration with standard logic circuits.
• Early Write or Output Enable Controlled Write: Offers flexibility in write operation timing.
• JEDEC Standard Pinout: Ensures compatibility with industry-standard designs.
• Plastic TSOP(II) Package: Compact and lightweight, ideal for high-density PCB layouts.
• +5.0V ±10% Power Supply: Operates reliably within a wide voltage range.

Applications

The K4F661611C is designed for use in a variety of applications that require high-speed, reliable memory solutions. Key application areas include:

• Computing Systems: Suitable for use in desktops, workstations, and servers where fast page mode operation enhances performance.
• Embedded Systems: Ideal for industrial control systems, medical devices, and automotive electronics due to its low power consumption and reliability.
• Telecommunications Equipment: Used in networking hardware, routers, and switches where high bandwidth is critical.
• Consumer Electronics: Applicable in gaming consoles, set-top boxes, and multimedia devices requiring efficient memory management.
• Test and Measurement Instruments: Benefits from the fast parallel test mode for quick validation and debugging.

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (Vcc): -0.5V to +7.0V
• Input Voltage (Vin): -0.5V to Vcc + 0.5V
• Output Voltage (Vout): -0.5V to Vcc + 0.5V
• Operating Temperature Range: 0°C to +70°C
• Storage Temperature Range: -55°C to +125°C

Recommended Operating Conditions

• Supply Voltage (Vcc): +5.0V ±10%
• Input High Voltage (Vih): 2.0V min
• Input Low Voltage (Vil): 0.8V max
• Output High Voltage (Voh): 2.4V min (Ioh = -4.0mA)
• Output Low Voltage (Vol): 0.4V max (Iol = 8.0mA)

Timing Characteristics

• RAS Precharge Time (tRP): 20ns min
• CAS Precharge Time (tCP): 20ns min
• RAS to CAS Delay Time (tRCD): 20ns min
• CAS Pulse Width (tCAS): 20ns min
• Access Time from CAS (tCAC): 15ns max
• Access Time from RAS (tRAC): 60ns max

Package Information

The K4F661611C is available in a Plastic TSOP(II) package, which is designed for surface-mount technology (SMT). The package dimensions and pin configuration adhere to industry standards, ensuring ease of integration into PCB designs.

Package Dimensions (TSOP-II 44-pin)

• Package Type: TSOP-II (Thin Small Outline Package)
• Pin Count: 44
• Body Width: 10.16mm
• Body Length: 18.41mm
• Lead Pitch: 0.8mm
• Lead Width: 0.22mm
• Lead Length: 0.6mm
• Package Height: 1.2mm max

Pin Configuration

The pinout of the K4F661611C follows the JEDEC standard for 4Mx16 DRAMs. Key pins include:

• Vcc: Power supply (+5.0V)
• Vss: Ground
• DQ0-DQ15: Data input/output lines
• A0-A10: Address inputs
• RAS: Row Address Strobe
• CAS: Column Address Strobe
• WE: Write Enable
• OE: Output Enable

Conclusion

The K4F661611C is a versatile and high-performance DRAM component that meets the demands of modern computing and embedded systems. With its advanced features, robust electrical characteristics, and compact packaging, it provides an excellent solution for applications requiring fast, reliable, and efficient memory access. Samsung's commitment to quality ensures that this device delivers consistent performance across a wide range of operating conditions.