54 80 - Technical Summary

54 80 - N-Channel Enhancement Mode MOSFET

Overview

The 54 80 is a high-performance N-channel enhancement mode MOSFET designed for a wide range of switching applications. This component offers excellent electrical characteristics, including low on-state resistance and fast switching speeds, making it ideal for power management applications. The device is constructed using advanced silicon technology to ensure reliability and efficiency in various operating conditions.

With its robust design and superior performance parameters, the 54 80 MOSFET is suitable for both industrial and consumer electronics applications where efficient power handling and compact form factors are required.

Features

N-channel enhancement mode design
Low on-state resistance (R_DS(on)) for reduced power dissipation
Fast switching characteristics
High current handling capability
Excellent thermal performance
Low gate drive requirements
Enhanced dv/dt capability
RoHS compliant
Designed for high reliability applications

Applications

The 54 80 MOSFET is versatile and finds use in numerous electronic applications, including:

Power supply switching circuits
DC-DC converters
Motor control systems
Load switching applications
Battery management systems
Automotive electronics
Industrial automation systems
Consumer electronics power management
LED lighting drivers
Portable electronic devices

Electrical Characteristics

The following tables detail the key electrical specifications of the 54 80 MOSFET:

Absolute Maximum Ratings

Parameter	Symbol	Value	Unit
Drain-Source Voltage	V_DS	80	V
Gate-Source Voltage	V_GS	±20	V
Drain Current - Continuous	I_D	54	A
Drain Current - Pulsed	I_DM	216	A
Power Dissipation	P_D	150	W
Operating Junction Temperature	T_J	-55 to +175	°C
Storage Temperature Range	T_stg	-55 to +175	°C

Static Electrical Characteristics

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	V_(BR)DSS	I_D = 250µA, V_GS = 0V	80	-	-	V
Gate Threshold Voltage	V_GS(th)	V_DS = V_GS, I_D = 250µA	1.0	2.0	3.0	V
Drain-Source On-State Resistance	R_DS(on)	V_GS = 10V, I_D = 27A	-	0.008	0.010	Ω
Forward Transconductance	g_fs	V_DS = 50V, I_D = 27A	30	50	-	S

Dynamic Electrical Characteristics

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Input Capacitance	C_iss	V_DS = 25V, V_GS = 0V, f = 1MHz	-	3000	4000	pF
Output Capacitance	C_oss	V_DS = 25V, V_GS = 0V, f = 1MHz	-	800	1000	pF
Reverse Transfer Capacitance	C_rss	V_DS = 25V, V_GS = 0V, f = 1MHz	-	100	150	pF
Turn-On Delay Time	t_d(on)	Similar Components appnote The DS1307 Serial Real Time Clock is a low–power, full BCD clock/calendar plus 56 bytes of nonvolatile SRAM. Address and data are transferred serially via the 2–wire… 6N135 These high-speed optocouplers are designed for use in analog or digital interface applications that require high-voltage isolation between the input and output. Applications include line receivers tha… max100 The MAX100 ECL-compatible, 250Msps, 8-bit analog-to- digital converter (ADC) allows accurate digitizing of ana-… DAC08 The DAC08 series of 8-bit monolithic digital-to-analog convert- ers provide very high-speed performance coupled with low cost… LM331N The LM131/LM231/LM331 family of voltage-to-frequency converters are ideally suited for use in simple low-cost cir- cuits for analog-to-digital conversion, precision frequency- to-voltage conversion, l… OUTLINE PAGE DIP SOT27-1… © 2025 Home Terms of Use Privacy Policy Cookie Policy Disclaimer Contact Us We use cookies to enhance your experience, analyze traffic, and (if you allow) serve personalized ads. By clicking �Accept All�, you agree to our use of cookies. Learn more