07 50Y

Technical Summary: 07 50Y Vertical Power DMOS Switch

Overview

The 07 50Y is a monolithic vertical power DMOS switch designed for high-efficiency switching applications. This component integrates advanced protection features, including overtemperature and overload protection, making it suitable for demanding environments. With a low on-state resistance and 5V logic-compatible input, it is optimized for power management in industrial, automotive, and consumer electronics applications.

Functional Block Diagram

The device consists of a power DMOS transistor with integrated control logic, overtemperature sensing, and current-limiting circuitry. The block diagram highlights the following key sections:

• Input Logic Interface (5V compatible)
• Gate Drive Circuitry
• Vertical DMOS Power Switch
• Overtemperature Protection with Hysteresis
• Overload Current Limiting

Features

• Vertical Power DMOS Technology: Enables high current handling with low conduction losses
• Low On-State Resistance: Typically <50mΩ, minimizing power dissipation
• 5V Logic Compatible Input: Direct interface with microcontrollers and logic circuits
• Integrated Protection Circuits:
  • Overtemperature protection with automatic reset (thermal hysteresis)
  • Overload/short-circuit protection with current limiting
• Fast Switching Speeds: Optimized for PWM applications
• Robust Design: Withstands high surge currents and voltage transients

Applications

The 07 50Y is ideal for a wide range of power switching applications including:

• Automotive Systems:
  • Electronic power steering
  • Transmission control modules
  • LED lighting drivers
• Industrial Equipment:
  • Motor drives and solenoids
  • Power distribution systems
  • Programmable logic controllers
• Consumer Electronics:
  • Smart home devices
  • Power management in appliances

Electrical Characteristics

All values specified at T_j = 25°C unless otherwise noted.

Absolute Maximum Ratings

• Drain-Source Voltage (V_DS): 50V
• Gate-Source Voltage (V_GS): ±20V
• Continuous Drain Current (I_D): 7A
• Pulsed Drain Current (I_DM): 20A (t_pulse ≤ 10μs)
• Power Dissipation (P_D): 2.5W
• Operating Junction Temperature Range (T_j): -40°C to +150°C

Static Characteristics

• On-State Resistance (R_DS(on)):
  • V_GS = 4.5V, I_D = 5A: 45mΩ max
  • V_GS = 10V, I_D = 5A: 35mΩ max
• Gate Threshold Voltage (V_GS(th)): 1.0V to 2.5V
• Gate-Source Leakage Current (I_GSS): ±100nA max

Dynamic Characteristics

• Input Capacitance (C_iss): 500pF typical
• Output Capacitance (C_oss): 200pF typical
• Turn-On Delay Time (t_d(on)): 10ns typical
• Turn-Off Delay Time (t_d(off)): 20ns typical

Protection Features

• Overtemperature Shutdown: Activates at T_j ≈ 150°C
• Overtemperature Hysteresis: 20°C typical
• Current Limit Threshold: 8A typical

Package Information

The 07 50Y is available in a TO-220AB package with the following mechanical characteristics:

• Package Type: Through-hole, 3-pin TO-220AB
• Dimensions: 10.4mm x 4.6mm x 9.15mm (LxWxH)
• Lead Material: Copper alloy, tin-plated
• Mounting Torque: 0.55 N·m max on 3mm screw
• Thermal Resistance (R_θJA): 62°C/W (no heatsink)
• Weight: 2.0g typical

Reliability and Qualification

• ESD Protection: Passes 2kV HBM per JESD22-A114
• Moisture Sensitivity Level (MSL): MSL1 (unlimited floor life)
• RoHS Compliant: Yes
• Halogen Free: Yes

Recommended Operating Conditions

• Supply Voltage (V_DD): 4.5V to 5.5V (logic input)
• Load Voltage (V_DS): 0V to 30V
• Ambient Temperature (T_A): -40°C to +85°C
• Gate Drive Voltage (V_GS): 4.5V to 10V

Design Considerations

For optimal performance:

• Use proper heatsinking for continuous high-current operation
• Include a gate resistor (10Ω typical) to control switching speed
• Place bypass capacitors (0.1μF ceramic) near the device pins
• Ensure PCB traces can handle maximum current (minimum 2mm width for 5A)
• For inductive loads, include flyback diodes for protection