2N5401 PNP High-Voltage Transistor

Overview

The 2N5401 is a PNP high-voltage transistor housed in a TO-92 (SOT54) plastic package. It is designed for applications requiring high voltage and low current operation, making it suitable for amplification and switching tasks in various electronic circuits. The device offers reliable performance with a maximum collector-emitter voltage of 150 V and a collector current of up to 300 mA.

Features

• High Voltage Capability: Supports a maximum collector-emitter voltage (V_CEO) of 150 V, making it ideal for high-voltage applications.
• Low Current Operation: Maximum collector current (I_C) of 300 mA ensures efficient performance in low-power circuits.
• PNP Polarity: Suitable for designs requiring a PNP transistor configuration.
• TO-92 Package: Compact and widely used through-hole package for easy prototyping and assembly.
• Plastic Encapsulation: Provides durability and electrical insulation.

Applications

The 2N5401 is versatile and finds use in a variety of electronic applications, including but not limited to:

• High-Voltage Amplification: Used in audio amplifiers, signal amplification stages, and other high-voltage analog circuits.
• Switching Circuits: Suitable for low-power switching applications in power supplies and control systems.
• Signal Processing: Employed in signal conditioning and waveform shaping circuits.
• Industrial Electronics: Used in industrial control systems, instrumentation, and automation equipment.
• Consumer Electronics: Found in televisions, radios, and other household electronic devices.

Electrical Characteristics

The following table summarizes the key electrical characteristics of the 2N5401 transistor under standard operating conditions (unless otherwise specified):

Absolute Maximum Ratings

• Collector-Emitter Voltage (V_CEO): 150 V
• Collector-Base Voltage (V_CBO): 160 V
• Emitter-Base Voltage (V_EBO): 5 V
• Collector Current (I_C): 300 mA
• Total Power Dissipation (P_tot): 625 mW (at 25°C)
• Operating Junction Temperature (T_j): -55°C to +150°C
• Storage Temperature (T_stg): -55°C to +150°C

Electrical Characteristics (T_A = 25°C unless noted)

• DC Current Gain (h_FE): 40 to 240 (at I_C = 10 mA, V_CE = 5 V)
• Collector-Emitter Saturation Voltage (V_CE(sat)): 0.5 V (max) (at I_C = 50 mA, I_B = 5 mA)
• Base-Emitter Saturation Voltage (V_BE(sat)): 1.2 V (max) (at I_C = 50 mA, I_B = 5 mA)
• Transition Frequency (f_T): 100 MHz (min) (at I_C = 10 mA, V_CE = 10 V, f = 100 MHz)
• Output Capacitance (C_obo): 4 pF (max) (at V_CB = 10 V, f = 1 MHz)

Package Information

The 2N5401 is available in a TO-92 (SOT54) plastic package, which is a widely used through-hole package for discrete transistors. The package dimensions and pin configuration are as follows:

TO-92 Package Dimensions

• Package Type: TO-92 (SOT54)
• Body Material: Plastic (Epoxy Molded)
• Lead Material: Copper Alloy
• Lead Finish: Tin-Plated
• Weight: Approximately 0.2 grams

Pin Configuration

• Pin 1 (Emitter): Connected to the emitter terminal of the transistor.
• Pin 2 (Base): Connected to the base terminal of the transistor.
• Pin 3 (Collector): Connected to the collector terminal of the transistor.

Mechanical Drawing

The TO-92 package has the following approximate dimensions:

• Body Length: 4.95 mm (max)
• Body Width: 3.94 mm (max)
• Body Height: 4.95 mm (max)
• Lead Length: 25.4 mm (nominal)
• Lead Spacing: 2.54 mm (between adjacent leads)

Thermal Characteristics

The thermal performance of the 2N5401 is critical for ensuring reliable operation under varying load conditions. The following parameters define its thermal behavior:

• Thermal Resistance, Junction to Ambient (R_θJA): 200°C/W (typical)
• Thermal Resistance, Junction to Case (R_θJC): 83.3°C/W (typical)

Reliability and Quality

The 2N5401 is manufactured under strict quality control standards to ensure high reliability and performance consistency. Key reliability features include:

• ESD Protection: Compliant with industry-standard electrostatic discharge (ESD) protection guidelines.
• RoHS Compliance: Meets Restriction of Hazardous Substances (RoHS) directives for environmentally friendly manufacturing.
• Moisture Sensitivity Level (MSL): MSL 1 (unlimited floor life at ≤30°C/85% relative humidity).

Conclusion

The 2N5401 PNP high-voltage transistor is a robust and versatile component suitable for a wide range of electronic applications. Its high-voltage capability, low current operation, and compact TO-92 package make it an excellent choice for designers working on amplification, switching, and signal processing circuits. With reliable electrical characteristics and a durable package, the 2N5401 ensures long-term performance in demanding environments.