2N5680 High Voltage Silicon Epitaxial Transistor

Overview

The 2N5680 is a high-voltage silicon epitaxial planar NPN transistor designed for use in power switching and amplification applications. This robust component is engineered to handle high voltage and current levels while maintaining reliable performance. Its construction utilizes epitaxial growth techniques to ensure precise doping profiles and excellent thermal characteristics, making it suitable for demanding industrial and commercial applications.

With its ability to operate at elevated voltages, the 2N5680 is particularly valuable in circuits where breakdown voltage and power dissipation are critical considerations. The transistor's design emphasizes stability under load and consistent performance across a wide temperature range.

Features

• High voltage capability (V_CEO up to 350V)
• Epitaxial planar construction for improved performance
• Low saturation voltage for efficient switching
• Excellent current gain characteristics
• Designed for high power applications
• Robust construction for reliable operation
• Wide operating temperature range
• Fast switching speeds for power applications

Applications

The 2N5680 finds use in numerous power electronics applications including:

Power Supply Circuits

• Switch-mode power supplies
• Voltage regulators
• DC-DC converters

Industrial Equipment

• Motor control circuits
• Solenoid drivers
• Relay replacements

Audio Applications

• High-power audio amplifiers
• Output stages in audio equipment

Other Applications

• Electronic ballasts
• CRT deflection circuits
• High-voltage switching circuits

Electrical Characteristics

The following table summarizes the key electrical parameters of the 2N5680 transistor:

Absolute Maximum Ratings

• Collector-Emitter Voltage (V_CEO): 350V
• Collector-Base Voltage (V_CBO): 400V
• Emitter-Base Voltage (V_EBO): 7V
• Collector Current (I_C): 8A
• Base Current (I_B): 4A
• Total Power Dissipation (P_tot): 75W
• Operating Junction Temperature Range: -65°C to +200°C

Typical Electrical Characteristics (T_A = 25°C unless otherwise noted)

• DC Current Gain (h_FE): 20-70 @ I_C = 4A, V_CE = 4V
• Collector-Emitter Saturation Voltage (V_CE(sat)): 1.5V max @ I_C = 4A, I_B = 0.4A
• Base-Emitter Saturation Voltage (V_BE(sat)): 2.5V max @ I_C = 4A, I_B = 0.4A
• Transition Frequency (f_T): 4MHz typical
• Collector Cut-off Current (I_CEO): 1mA max @ V_CE = 350V

Package Information

The 2N5680 is available in a robust TO-3 metal can package, which provides excellent thermal performance and mechanical durability. The package details include:

TO-3 Package Dimensions

• Package Type: TO-3 (JEDEC)
• Mounting Style: Through-hole
• Weight: Approximately 11 grams
• Terminal Material: Nickel-plated steel
• Case Material: Steel with nickel plating
• Lead Finish: Solderable per MIL-STD-202

Mechanical Characteristics

• Mounting Torque: 6-8 in-lbs (0.7-0.9 Nm)
• Terminal Diameter: 0.062 inch (1.57mm)
• Package Height: 0.425 inch (10.8mm)
• Package Diameter: 0.650 inch (16.5mm)
• Flange Thickness: 0.060 inch (1.52mm)

Thermal Characteristics

• Thermal Resistance, Junction to Case (R_θJC): 1.5°C/W
• Thermal Resistance, Junction to Ambient (R_θJA): 40°C/W (without heatsink)

Handling and Mounting Considerations

Proper handling and mounting are essential for optimal performance and reliability of the 2N5680 transistor:

Mounting Instructions

• Use appropriate thermal compound between transistor and heatsink
• Ensure flat mounting surface on heatsink
• Apply specified torque to mounting hardware
• Maintain electrical isolation when required

ESD Precautions

• Handle with appropriate ESD protection
• Store in anti-static packaging when not in use
• Avoid touching leads directly with bare hands

Reliability and Qualification

The 2N5680 is designed and manufactured to meet stringent quality and reliability standards:

• MIL-STD-750 test methods
• 100% electrical testing
• High temperature burn-in available
• Extended life testing

Conclusion

The 2N5680 high voltage silicon epitaxial transistor represents a robust solution for power electronics applications requiring high voltage capability and reliable performance. Its combination of electrical characteristics, thermal performance, and mechanical durability make it particularly suitable for demanding industrial and commercial applications. When properly implemented with adequate heatsinking and circuit design considerations, the 2N5680 provides excellent long-term reliability and consistent performance across a wide range of operating conditions.