2N6039 Technical Summary

2N6039 NPN Silicon Power Darlington Transistor

Overview

The 2N6039 is an NPN silicon power Darlington transistor designed for high-power amplification and switching applications. It is the complementary pair to the PNP 2N6036, both housed in the Jedec SOT-32 plastic package. This device is characterized by its high current gain, robust voltage ratings, and ability to handle significant power dissipation, making it suitable for demanding industrial and commercial applications.

The Darlington configuration provides exceptional current amplification, allowing small input currents to control much larger output currents. The 2N6039 is widely used in power supplies, motor control circuits, and audio amplifiers due to its reliable performance and rugged construction.

Features

High current gain (Darlington configuration)
Complementary pair available (2N6036 PNP)
High collector-emitter voltage rating (80V)
Continuous collector current of 4A
Peak collector current capability of 8A
Power dissipation up to 40W at 25°C
Plastic SOT-32 package for good thermal performance
Wide operating temperature range

Applications

The 2N6039 finds use in a variety of power electronics applications including:

Linear power amplifiers
Motor control circuits
Power supply regulators
Audio power amplifiers
Relay drivers
Solenoid and actuator control
Industrial control systems
DC-DC converters

The Darlington configuration makes it particularly useful in applications where high current gain is required from relatively small input signals, such as in sensor interfaces or microcontroller output stages driving heavy loads.

Electrical Characteristics

Absolute Maximum Ratings

Stresses exceeding these ratings may damage the device:

Collector-Base Voltage (VCBO): 80V (IE = 0)
Collector-Emitter Voltage (VCEO): 80V (IB = 0)
Emitter-Base Voltage (VEBO): 5V (IC = 0)
Collector Current (IC): 4A continuous
Collector Peak Current (ICM): 8A (pulsed)
Base Current (IB): 100mA
Total Power Dissipation (Ptot): 40W at Tc ≤ 25°C
Storage Temperature Range (Tstg): -65°C to +150°C

Thermal Characteristics

Thermal Resistance, Junction-to-Case (RθJC): 3.125°C/W
Thermal Resistance, Junction-to-Ambient (RθJA): 62.5°C/W

Electrical Characteristics (TA = 25°C unless otherwise specified)

DC Current Gain (hFE): 750 minimum, 15000 typical at VCE = 4V, IC = 3A
Collector-Emitter Saturation Voltage (VCE(sat)): 1.2V maximum at IC = 3A, IB = 12mA
Base-Emitter Saturation Voltage (VBE(sat)): 2.5V maximum at IC = 3A, IB = 12mA
Turn-on Time (ton): 1.5μs typical
Turn-off Time (toff): 5μs typical

Package Information

SOT-32 Package Dimensions

The 2N6039 is housed in a Jedec SOT-32 plastic package with the following mechanical characteristics:

Package type: Through-hole mounting
Terminal count: 3 (Emitter, Base, Collector)
Lead material: Copper alloy
Lead finish: Solderable
Package weight: Approximately 1.2 grams
Mounting torque: 5 lb-in maximum

Package Outline Dimensions (in millimeters)

Overall height: 9.5mm max
Lead length: 10mm nominal
Lead spacing: 5.5mm between emitter and base, 8.5mm between emitter and collector
Body width: 10.5mm
Body length: 15.5mm

Operating Considerations

Thermal Management

Proper heat sinking is essential when operating the 2N6039 near its maximum ratings. The power dissipation derating factor is 0.32W/°C above 25°C case temperature. For reliable operation: