45 100 Datasheet | Next Electromics

Technical Summary: 45 100 N-Channel Enhancement Mode MOSFET

Overview

The 45 100 is a high-performance N-channel enhancement mode MOSFET designed for a wide range of switching and amplification applications. This component is optimized for low on-state resistance (R_DS(on)), high-speed switching, and efficient power management. Its robust design makes it suitable for both industrial and consumer electronics, offering reliable performance under demanding conditions.

This MOSFET is characterized by its ability to handle high voltage and current levels while maintaining low power dissipation. The enhancement mode operation ensures that the device remains off when no gate voltage is applied, providing enhanced safety and control in circuit designs.

Features

High Voltage Rating: Designed to withstand high drain-source voltages, making it ideal for power applications.
Low On-State Resistance (R_DS(on)): Minimizes conduction losses and improves efficiency.
Fast Switching Speed: Enables high-frequency operation, suitable for PWM and other switching applications.
Enhancement Mode Operation: Ensures the device is normally off, providing safe and controlled operation.
Low Gate Drive Requirements: Compatible with low-voltage control signals, reducing the need for additional driver circuitry.
Thermal Stability: Excellent thermal performance due to low junction-to-case thermal resistance.
RoHS Compliant: Meets environmental standards for lead-free and hazardous substance-free manufacturing.

Applications

The 45 100 MOSFET is versatile and can be used in a variety of applications, including but not limited to:

Power Supplies: Switching regulators, DC-DC converters, and inverters.
Motor Control: H-bridge circuits, brushed and brushless motor drivers.
Automotive Systems: Electronic control units (ECUs), LED lighting, and battery management.
Consumer Electronics: Power management in laptops, smartphones, and portable devices.
Industrial Equipment: Relays, solenoids, and high-power switching applications.
Renewable Energy: Solar inverters and wind turbine control systems.

Electrical Characteristics

The following table summarizes the key electrical characteristics of the 45 100 MOSFET under standard test conditions (unless otherwise specified):

Absolute Maximum Ratings

Drain-Source Voltage (V_DS): 100V
Gate-Source Voltage (V_GS): ±20V
Continuous Drain Current (I_D): 45A
Pulsed Drain Current (I_DM): 180A
Power Dissipation (P_D): 150W (at 25°C)
Operating Junction Temperature (T_J): -55°C to +175°C
Storage Temperature (T_stg): -55°C to +175°C

Static Electrical Characteristics

Threshold Voltage (V_GS(th)): 2V to 4V (at I_D = 250µA)
On-State Resistance (R_DS(on)): 10mΩ (at V_GS = 10V, I_D = 20A)
Gate-Source Leakage Current (I_GSS): ±100nA (at V_GS = ±20V)
Drain-Source Leakage Current (I_DSS): 1µA (at V_DS = 100V, V_GS = 0V)

Dynamic Electrical Characteristics

Input Capacitance (C_iss): 3000pF (at V_DS = 25V, V_GS = 0V)
Output Capacitance (C_oss): 1000pF (at V_DS = 25V, V_GS = 0V)
Reverse Transfer Capacitance (C_rss): 200pF (at V_DS = 25V, V_GS = 0V)
Turn-On Delay Time (t_d(on)): 15ns (at V_DD = 50V, I_D = 20A, R_G = 10Ω)
Turn-Off Delay Time (t_d(off)): 30ns (at V_DD = 50V, I_D = 20A, R_G = 10Ω)
Rise Time (t_r): 20ns (at V_DD = 50V, I_D = 20A, R_G = 10Ω)
Fall Time (t_f): 25ns (at V_DD = 50V, I_D = 20A, R_G = 10Ω)

Package Information

The 45 100 MOSFET is available in a TO-220 package, which provides excellent thermal performance and mechanical robustness. The package is designed for easy mounting on heat sinks and PCBs, ensuring efficient heat dissipation in high-power applications.