The 528 55 is a high-performance N-channel MOSFET designed for applications requiring very low on-state resistance and robust ESD protection. This component integrates advanced features such as an integral zener diode for enhanced electrostatic discharge (ESD) protection, making it suitable for demanding environments. With a total power dissipation of 96W and a junction temperature rating of 175°C, the 528 55 is engineered for reliability and efficiency in power management applications.
The 528 55 is versatile and can be used in a wide range of applications, including but not limited to:
The following table summarizes the key electrical characteristics of the 528 55:
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Total Power Dissipation | Ptot | 96 | W |
| Junction Temperature | Tj | 175 | °C |
| Drain-Source On-State Resistance | RDS(ON) | 28 | mΩ |
| ESD Protection (Zener Diode) | ESD | 2 | kV |
The 528 55 is available in a robust and industry-standard package designed for optimal thermal and electrical performance. Key package details include:
The exact dimensions of the package may vary slightly depending on the manufacturer. Below are typical measurements for the TO-220 package:
The 528 55 is designed to meet stringent reliability standards and complies with industry regulations, including:
The 528 55 N-channel MOSFET is a high-performance component offering very low on-state resistance, high power dissipation, and robust ESD protection. Its versatility makes it suitable for a wide range of applications, from power management to automotive systems. With its reliable package options and compliance with industry standards, the 528 55 is an excellent choice for engineers seeking efficiency and durability in their designs.