Technical Summary: 62 60 N-Channel Enhancement Mode Logic MOSFET

Overview

The 62 60 is an N-channel enhancement mode logic MOSFET designed for high-efficiency switching applications. This component is optimized for low-voltage, high-speed operations, making it suitable for power management, load switching, and digital logic interfaces. Its compact design and robust electrical characteristics ensure reliable performance in a variety of electronic circuits.

With its low on-resistance (R_DS(on)) and fast switching speeds, the 62 60 MOSFET is ideal for applications requiring minimal power loss and high-frequency operation. The device is commonly used in portable electronics, power supplies, and motor control systems.

Features

• N-Channel Enhancement Mode: Designed for logic-level gate drive compatibility.
• Low On-Resistance (R_DS(on)): Minimizes conduction losses for improved efficiency.
• Fast Switching Speeds: Enables high-frequency operation in switching applications.
• Low Threshold Voltage (V_GS(th)): Compatible with 3.3V and 5V logic circuits.
• High Current Handling: Supports significant load currents in compact designs.
• ESD Protection: Enhanced electrostatic discharge protection for improved reliability.
• Compact Package Options: Available in industry-standard SMD and through-hole packages.

Applications

The 62 60 MOSFET is widely used in the following applications:

• Power Management: DC-DC converters, voltage regulators, and load switches.
• Portable Electronics: Battery-powered devices, smartphones, and tablets.
• Motor Control: H-bridge circuits, PWM motor drivers.
• Digital Logic Interfaces: Level shifting, signal switching.
• Automotive Systems: LED drivers, power distribution modules.
• Industrial Automation: Relay replacements, solenoid drivers.

Electrical Characteristics

The following table summarizes the key electrical specifications of the 62 60 MOSFET under standard operating conditions (T_A = 25°C unless otherwise specified):

Absolute Maximum Ratings

• Drain-Source Voltage (V_DS): 60V
• Gate-Source Voltage (V_GS): ±20V
• Continuous Drain Current (I_D): 6.2A
• Pulsed Drain Current (I_DM): 24A
• Power Dissipation (P_D): 2.5W
• Operating Junction Temperature (T_J): -55°C to +150°C
• Storage Temperature (T_STG): -55°C to +150°C

Static Electrical Characteristics

• Threshold Voltage (V_GS(th)): 1.0V to 2.5V (V_DS = V_GS, I_D = 250µA)
• On-Resistance (R_DS(on)): 60mΩ (V_GS = 10V, I_D = 5A)
• Gate-Source Leakage Current (I_GSS): ±100nA (V_GS = ±20V)
• Drain-Source Leakage Current (I_DSS): 1µA (V_DS = 60V, V_GS = 0V)

Dynamic Electrical Characteristics

• Input Capacitance (C_iss): 500pF (V_DS = 25V, V_GS = 0V, f = 1MHz)
• Output Capacitance (C_oss): 200pF (V_DS = 25V, V_GS = 0V, f = 1MHz)
• Reverse Transfer Capacitance (C_rss): 50pF (V_DS = 25V, V_GS = 0V, f = 1MHz)
• Turn-On Delay Time (t_d(on)): 10ns (V_DD = 30V, I_D = 5A, R_G = 10Ω)
• Turn-Off Delay Time (t_d(off)): 20ns (V_DD = 30V, I_D = 5A, R_G = 10Ω)
• Rise Time (t_r): 15ns (V_DD = 30V, I_D = 5A, R_G = 10Ω)
• Fall Time (t_f): 25ns (V_DD = 30V, I_D = 5A, R_G = 10Ω)

Package Information

The 62 60 MOSFET is available in multiple package options to suit various assembly and thermal management requirements. Below are the key details for the most common package variants:

TO-220 Package

• Package Type: Through-hole, three-pin configuration.
• Dimensions: 10.0mm x 15.0mm x 4.5mm (typical).
• Pin Configuration:
  • Pin 1: Gate (G)
  • Pin 2: Drain (D)
  • Pin 3: Source (S)
• Thermal Resistance (R_θJA): 62°C/W (without heatsink).
• Mounting: Requires PCB drilling or heatsink attachment.

SOT-23 Package

• Package Type: Surface-mount, three-pin configuration.
• Dimensions: 2.9mm x 2.4mm x 1.1mm (typical).
• Pin Configuration:
  • Pin 1: Gate (G)