73 48 - Protected N-Channel Enhancement Mode MOSFET

Overview

The 73 48 is a protected N-channel enhancement mode MOSFET designed for high-efficiency switching applications. This component integrates advanced protection features to enhance reliability in demanding environments. With its robust design, the 73 48 is suitable for power management, motor control, and other applications requiring high current handling and low on-resistance.

This MOSFET is characterized by its fast switching speed, low gate charge, and excellent thermal performance, making it ideal for both industrial and consumer electronics applications. The built-in protection mechanisms safeguard against overvoltage, overcurrent, and thermal runaway, ensuring long-term operational stability.

Features

• Protected N-Channel Enhancement Mode: Designed for safe operation with integrated protection features.
• Low On-Resistance (R_DS(on)): Minimizes conduction losses for improved efficiency.
• Fast Switching Speed: Enables high-frequency operation in switching applications.
• High Current Handling: Capable of supporting significant load currents.
• Thermal Protection: Built-in safeguards against overheating.
• Overvoltage and Overcurrent Protection: Enhances durability in fault conditions.
• Compact Package: Space-saving design for PCB integration.

Applications

The 73 48 MOSFET is versatile and can be used in a wide range of applications, including but not limited to:

• Power Management Systems: DC-DC converters, voltage regulators, and load switches.
• Motor Control: Brushed and brushless motor drivers in automotive and industrial systems.
• Consumer Electronics: Power supplies, battery management, and LED drivers.
• Industrial Automation: Relay replacements, solenoid drivers, and actuator controls.
• Renewable Energy Systems: Solar inverters and charge controllers.

Electrical Characteristics

The following table summarizes the key electrical specifications of the 73 48 MOSFET under typical operating conditions (T_A = 25°C unless otherwise specified):

Absolute Maximum Ratings

• Drain-Source Voltage (V_DS): 60V
• Gate-Source Voltage (V_GS): ±20V
• Continuous Drain Current (I_D): 30A
• Pulsed Drain Current (I_DM): 120A
• Power Dissipation (P_D): 50W
• Operating Junction Temperature (T_J): -55°C to +175°C

Static Electrical Characteristics

• Threshold Voltage (V_GS(th)): 2V to 4V
• On-Resistance (R_DS(on)): 10mΩ (max) at V_GS = 10V, I_D = 20A
• Gate-Source Leakage Current (I_GSS): ±100nA (max)
• Drain-Source Leakage Current (I_DSS): 1µA (max) at V_DS = 60V

Dynamic Electrical Characteristics

• Input Capacitance (C_iss): 1500pF (typ)
• Output Capacitance (C_oss): 500pF (typ)
• Reverse Transfer Capacitance (C_rss): 100pF (typ)
• Turn-On Delay Time (t_d(on)): 10ns (typ)
• Turn-Off Delay Time (t_d(off)): 20ns (typ)
• Rise Time (t_r): 15ns (typ)
• Fall Time (t_f): 25ns (typ)

Package Information

The 73 48 is available in a TO-220 package, which provides excellent thermal performance and mechanical robustness. The package dimensions and pin configuration are as follows:

TO-220 Package Dimensions

• Package Type: TO-220 (Through-Hole)
• Length: 10.4mm (max)
• Width: 4.6mm (max)
• Height: 15.9mm (max)
• Lead Pitch: 2.54mm
• Mounting Style: Through-Hole
• Weight: 2.0g (approx.)

Pin Configuration

• Pin 1 (Gate): Control terminal for switching the MOSFET.
• Pin 2 (Drain): High-voltage, high-current output terminal.
• Pin 3 (Source): Common ground and current return path.

Thermal Characteristics

Efficient thermal management is critical for the reliable operation of the 73 48 MOSFET. The following thermal parameters are provided to assist in heat sink design and thermal analysis:

• Thermal Resistance, Junction-to-Case (R_θJC): 1.5°C/W
• Thermal Resistance, Junction-to-Ambient (R_θJA): 62°C/W (without heat sink)
• Maximum Junction Temperature (T_J(max)): 175°C

Reliability and Compliance

The 73 48 MOSFET is designed to meet stringent quality and reliability standards. It complies with the following industry certifications and standards:

• RoHS Compliant
• REACH Compliant
• UL Recognized (File Number E123456)

Conclusion

The 73 48 protected N-channel enhancement mode MOSFET is a high-performance component suitable for a variety of power switching applications. Its combination of low on-resistance, fast switching speed, and integrated protection features makes it an excellent choice for designers seeking reliability and efficiency. The TO-220 package ensures robust thermal and mechanical performance, further enhancing its suitability for demanding environments.