75 60H N-Channel MOSFET

Overview

The 75 60H is a high-performance N-channel MOSFET designed for power switching applications. This component offers low on-state resistance, high switching speed, and robust thermal performance, making it suitable for a wide range of industrial and consumer electronics applications. The 75 60H is optimized for efficiency and reliability, ensuring stable operation under demanding conditions.

Features

• Low On-State Resistance (R_DS(on)): Minimizes conduction losses, improving overall efficiency.
• High Current Handling: Capable of handling continuous drain currents up to 75A, with peak currents exceeding this value.
• Fast Switching Speed: Optimized gate charge for reduced switching losses, enhancing performance in high-frequency applications.
• High Voltage Rating: Supports drain-to-source voltages (V_DS) up to 60V, making it suitable for medium-voltage applications.
• Thermal Efficiency: Low thermal resistance ensures effective heat dissipation, improving reliability under high-load conditions.
• Robust Construction: Designed to withstand harsh operating environments, including high temperatures and voltage spikes.
• Logic-Level Gate Drive: Compatible with low-voltage control signals, simplifying integration with modern microcontrollers.

Applications

The 75 60H N-channel MOSFET is versatile and finds use in a variety of applications, including but not limited to:

• Power Supplies: Used in switch-mode power supplies (SMPS) for efficient voltage conversion.
• Motor Control: Ideal for driving DC motors in automotive, industrial, and robotics applications.
• DC-DC Converters: Enables high-efficiency step-up or step-down voltage regulation.
• Battery Management Systems: Provides reliable switching in charge/discharge circuits for lithium-ion and lead-acid batteries.
• LED Drivers: Supports high-current LED driving in lighting systems.
• Automotive Electronics: Suitable for electric vehicle (EV) power systems, including inverters and auxiliary power modules.
• Industrial Automation: Used in PLCs, solenoids, and relay replacements for robust performance.

Electrical Characteristics

The following table summarizes the key electrical specifications of the 75 60H N-channel MOSFET under standard test conditions (unless otherwise noted):

Absolute Maximum Ratings

• Drain-to-Source Voltage (V_DS): 60V
• Gate-to-Source Voltage (V_GS): ±20V
• Continuous Drain Current (I_D): 75A at T_C = 25°C
• Pulsed Drain Current (I_DM): 300A (limited by package)
• Power Dissipation (P_D): 200W (at T_C = 25°C)
• Operating Junction Temperature (T_J): -55°C to +175°C
• Storage Temperature (T_STG): -55°C to +175°C

Static Electrical Characteristics

• Threshold Voltage (V_GS(th)): 2V to 4V (at I_D = 250µA)
• On-State Resistance (R_DS(on)): 8mΩ (max) at V_GS = 10V, I_D = 75A
• Gate Charge (Q_G): 60nC (typical) at V_DS = 30V, I_D = 75A
• Input Capacitance (C_iss): 3000pF (typical) at V_DS = 25V, V_GS = 0V
• Output Capacitance (C_oss): 1500pF (typical) at V_DS = 25V, V_GS = 0V
• Reverse Transfer Capacitance (C_rss): 200pF (typical) at V_DS = 25V, V_GS = 0V

Dynamic Electrical Characteristics

• Turn-On Delay Time (t_d(on)): 20ns (typical) at V_DD = 30V, I_D = 75A, R_G = 10Ω
• Rise Time (t_r): 30ns (typical) under same conditions
• Turn-Off Delay Time (t_d(off)): 50ns (typical) under same conditions
• Fall Time (t_f): 40ns (typical) under same conditions

Package Information

The 75 60H N-channel MOSFET is available in a TO-220 package, which provides excellent thermal and electrical performance. The package details are as follows:

TO-220 Package Dimensions

• Package Type: Through-hole, 3-pin TO-220
• Length: 10.4mm (max)
• Width: 4.6mm (max)
• Height: 16.0mm (max)
• Lead Pitch: 2.54mm
• Mounting Style: Vertical or horizontal with appropriate heat sinking

Thermal Characteristics

• Junction-to-Case Thermal Resistance (R_θJC): 0.5°C/W
• Junction-to-Ambient Thermal Resistance (R_θJA): 62°C/W (without heatsink)
• Maximum Junction Temperature (T_J): 175°C

Pin Configuration

• Pin 1: Gate (G)
• Pin 2: Drain (D)
• Pin 3: Source (S)

Conclusion

The 75 60H N-channel MOSFET is a high-efficiency, robust power switching device suitable for a broad range of applications. Its combination of low on-state resistance, high current handling, and fast switching makes it an excellent choice for designers seeking reliability and performance. The TO-220 package ensures ease of integration and effective thermal management, further enhancing its suitability for demanding environments.