81 100 N-Channel Enhancement Mode MOSFET

Overview

The 81 100 is a high-performance N-channel enhancement mode MOSFET designed for a wide range of switching and amplification applications. This component offers low on-state resistance, high-speed switching capabilities, and robust thermal performance, making it suitable for power management in industrial, automotive, and consumer electronics. Its advanced design ensures efficient operation with minimal power loss, enhancing system reliability and performance.

Features

• Low On-State Resistance (R_DS(on)): Minimizes conduction losses, improving efficiency in high-current applications.
• High-Speed Switching: Optimized for fast switching applications, reducing transition losses.
• Enhanced Thermal Performance: Robust package design ensures effective heat dissipation, supporting high-power operations.
• Low Gate Charge (Q_g): Reduces drive requirements, enabling efficient control with low-power gate drivers.
• Avalanche Energy Rated: Provides increased reliability in inductive load applications.
• RoHS Compliant: Meets environmental standards for lead-free and hazardous substance-free manufacturing.

Applications

The 81 100 MOSFET is versatile and can be deployed in a variety of electronic systems, including:

• Power Supplies: Used in DC-DC converters, SMPS, and voltage regulation circuits.
• Motor Control: Ideal for H-bridge configurations and PWM motor drives in automotive and industrial systems.
• Load Switching: Efficiently manages high-current loads in power distribution systems.
• Audio Amplifiers: Provides high-fidelity switching in Class-D audio amplifiers.
• Lighting Systems: Supports LED drivers and high-efficiency lighting solutions.

Electrical Characteristics

The following table summarizes the key electrical parameters of the 81 100 MOSFET under standard test conditions (unless otherwise specified):

Absolute Maximum Ratings

• Drain-Source Voltage (V_DSS): 100V
• Gate-Source Voltage (V_GS): ±20V
• Continuous Drain Current (I_D): 81A
• Pulsed Drain Current (I_DM): 100A
• Power Dissipation (P_D): 200W (at 25°C)
• Operating Junction Temperature (T_J): -55°C to +175°C

Static Electrical Characteristics

• Threshold Voltage (V_GS(th)): 2V to 4V (at V_DS = V_GS, I_D = 250µA)
• On-State Resistance (R_DS(on)): 10mΩ (max) at V_GS = 10V, I_D = 40A
• Gate-Source Leakage Current (I_GSS): ±100nA (max) at V_GS = ±20V
• Drain-Source Leakage Current (I_DSS): 1µA (max) at V_DS = 100V, V_GS = 0V

Dynamic Electrical Characteristics

• Input Capacitance (C_iss): 3000pF (typ) at V_DS = 25V, V_GS = 0V
• Output Capacitance (C_oss): 1000pF (typ) at V_DS = 25V, V_GS = 0V
• Reverse Transfer Capacitance (C_rss): 200pF (typ) at V_DS = 25V, V_GS = 0V
• Turn-On Delay Time (t_d(on)): 15ns (typ) at V_DD = 50V, I_D = 40A, R_G = 10Ω
• Turn-Off Delay Time (t_d(off)): 30ns (typ) at V_DD = 50V, I_D = 40A, R_G = 10Ω

Package Information

The 81 100 MOSFET is available in a TO-220 package, which is widely used for its excellent thermal and electrical performance. Below are the key package details:

TO-220 Package Dimensions

• Package Type: Through-hole, 3-pin TO-220
• Length: 10.4mm (max)
• Width: 4.6mm (max)
• Height: 15.9mm (max)
• Lead Pitch: 2.54mm
• Mounting Style: Vertical or horizontal with appropriate heat sinking

Thermal Characteristics

• Thermal Resistance, Junction-to-Case (R_θJC): 1.5°C/W
• Thermal Resistance, Junction-to-Ambient (R_θJA): 62°C/W (without heatsink)

Conclusion

The 81 100 N-channel enhancement mode MOSFET is a high-efficiency, robust component suitable for demanding power applications. Its combination of low R_DS(on), high current handling, and excellent thermal properties makes it an ideal choice for designers seeking reliable performance in switching and amplification circuits. Whether used in power supplies, motor drives, or lighting systems, the 81 100 delivers consistent results under a wide range of operating conditions.