Advertisement

BLY87

#BLY87 #N-P-N #silicon planar epitaxial #high-frequency #RF amplifier #Class-A #Class-B #Class-C #switching applications #thermal stability
BLY87 - N-P-N Silicon Planar Epitaxial Transistor Technical Summary

BLY87 - N-P-N Silicon Planar Epitaxial Transistor

Overview

The BLY87 is an N-P-N silicon planar epitaxial transistor designed for high-frequency (h.f.) and mobile applications. It is optimized for use in Class-A, Class-B, and Class-C amplifier circuits, offering robust performance in RF and switching applications. The transistor is characterized by its high power gain, excellent thermal stability, and low saturation voltage, making it suitable for demanding environments.

Manufactured using advanced epitaxial technology, the BLY87 ensures consistent performance and reliability. Its construction minimizes parasitic effects, enhancing its efficiency in high-frequency operations. The transistor is widely used in communication systems, industrial equipment, and RF power amplification.

Features

Applications

The BLY87 transistor is versatile and finds use in a variety of high-frequency and power applications, including:

Electrical Characteristics

The following tables outline the key electrical specifications of the BLY87 transistor under standard test conditions (unless otherwise specified).

Absolute Maximum Ratings

Thermal Characteristics

Small-Signal Characteristics (Ta = 25°C)

Package Information

The BLY87 is available in a TO-39 metal can package, which provides excellent thermal dissipation and mechanical durability. The package is hermetically sealed, ensuring long-term reliability in harsh environments.

Package Dimensions

Mechanical Drawing

(Note: A detailed mechanical drawing would typically be included here, showing dimensions such as diameter, height, lead spacing, and tolerances.)

Reliability and Compliance

The BLY87 transistor is manufactured under strict quality control standards, ensuring high reliability and consistency. It complies with industry standards for RF power transistors, including:

Conclusion

The BLY87 N-P-N silicon planar epitaxial transistor is a high-performance component designed for RF power amplification and switching applications. Its combination of high power gain, thermal stability, and robust packaging makes it an excellent choice for demanding communication and industrial systems. Engineers and designers can rely on the BLY87 for consistent performance in high-frequency and power-critical circuits.

Similar Components
BD231 – Datasheet Preview
BD231
PNP power transistor in a TO-126; SOT32 plastic…
2N6036 – Datasheet Preview
2N6036
The 2N6036 and 2N6039 are complementary silicon power Darlington transistors mounted in Jedec SOT-32 plastic package. INTERNAL SCHEMATIC DIAGRAM June 1997 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val…
73 60 – Datasheet Preview
73 60
QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX.…
575 55 – Datasheet Preview
575 55
QUICK REFERENCE DATA N-channel…
BST70 – Datasheet Preview
BST70
N-channel enhancement mode…
BF495 – Datasheet Preview
BF495
NPN medium frequency transistor in a TO-92; SOT54…