Advertisement

BU508DX

#BU508DX #high voltage #NPN transistor #switching #SOT399 #integrated diode #horizontal deflection #television #high-speed
BU508DX Technical Summary

BU508DX High Voltage NPN Transistor

Overview

The BU508DX is a high-voltage, high-speed switching NPN transistor housed in a fully isolated SOT399 package. This component features an integrated efficiency diode, making it particularly suitable for demanding applications such as horizontal deflection circuits in color television receivers. The BU508DX is designed to deliver robust performance under high-voltage conditions while ensuring efficient switching characteristics.

This transistor is engineered to meet the stringent requirements of modern electronic systems, offering a combination of high breakdown voltage, fast switching speeds, and thermal stability. Its fully isolated package enhances electrical isolation and thermal dissipation, making it a reliable choice for high-performance applications.

Features

Applications

The BU508DX is primarily designed for high-voltage switching applications, with a particular focus on the following uses:

Electrical Characteristics

The following table outlines the key electrical characteristics of the BU508DX under typical operating conditions:

Absolute Maximum Ratings

Electrical Characteristics (Tj = 25°C unless otherwise specified)

Package Information

The BU508DX is housed in an SOT399 package, which provides excellent thermal and electrical isolation. The package dimensions and pin configuration are as follows:

Package Dimensions

Pin Configuration

Thermal Characteristics

Conclusion

The BU508DX is a high-performance NPN transistor designed for high-voltage, high-speed switching applications. Its integrated efficiency diode, robust thermal characteristics, and fully isolated package make it an excellent choice for demanding environments such as television deflection circuits and power supplies. With its high breakdown voltage and fast switching times, the BU508DX ensures reliable operation in a wide range of electronic systems.

Similar Components
MAT03 – Datasheet Preview
MAT03
The MAT03 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Low noise characteristics (1 nV/√Hz max @ 1 kHz), high bandwidth (190 MHz typical), and lo…
BD227 – Datasheet Preview
BD227
PNP power transistor in a TO-126; SOT32 plastic…
2N6111 – Datasheet Preview
2N6111
The 2N6107 and 2N6111 are epitaxial-base PNP…
63 – Datasheet Preview
63
QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX.…
BC859 – Datasheet Preview
BC859
PNP transistor in a SOT323 plastic package.…
54 20 – Datasheet Preview
54 20
QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX.…