Rf-power-switch
This RF power switch operates at 1.7 MHz with a 50-V source and load. Its on-loss is 0.2 dB, and its off-isolation is 30 dB. It provides 40-W PEP, 45 V_RMS, and 0.9 A_PEAK. The control input can come from CMOS, TTL, LS, etc. To turn on Q1, which activates Q2, a TMOS MTP3N35.
The RF power switch described is designed for operation at a frequency of 1.7 MHz, making it suitable for various RF applications. The switch is characterized by its ability to handle a maximum voltage of 50 V across both the source and load, ensuring compatibility with high-power RF systems. The on-loss of 0.2 dB indicates minimal signal attenuation when the switch is in the 'on' state, which is crucial for maintaining signal integrity in RF circuits. The off-isolation of 30 dB signifies that when the switch is in the 'off' state, there is significant attenuation of unwanted signals, reducing leakage and interference.
The device is capable of delivering a peak envelope power (PEP) of 40 W, which is essential for high-power RF transmissions. The voltage rating of 45 V_RMS and a peak current of 0.9 A_PEAK further illustrate the switch's robust performance characteristics, allowing it to handle substantial power levels without degradation.
Control of the switch is versatile, as it can be actuated by various logic levels, including CMOS, TTL, and LS. This flexibility enables integration into different circuit designs, accommodating a range of control systems. The operation of the switch involves turning on Q1, which subsequently activates Q2, a TMOS MTP3N35. The TMOS technology contributes to efficient switching performance, with fast response times and low gate drive requirements, making it ideal for RF applications.
In summary, this RF power switch is a high-performance component tailored for RF applications, featuring low on-loss, high off-isolation, and capable of handling significant power levels, while offering flexible control options for integration into various electronic systems.This rf power switch operates at 1. 7 MHz with a 50-V source and load. Its on loss is 0.2 dB and its off isolation is 30 dB. It provides 40-W PEP, 45 VrEAK and 0.9 APEAK· The control input can come from CMOS, TTL, LS, etc., to turn on Q1, which turns on Q2, a TMOS MTP3N35. 🔗 External reference
The RF power switch described is designed for operation at a frequency of 1.7 MHz, making it suitable for various RF applications. The switch is characterized by its ability to handle a maximum voltage of 50 V across both the source and load, ensuring compatibility with high-power RF systems. The on-loss of 0.2 dB indicates minimal signal attenuation when the switch is in the 'on' state, which is crucial for maintaining signal integrity in RF circuits. The off-isolation of 30 dB signifies that when the switch is in the 'off' state, there is significant attenuation of unwanted signals, reducing leakage and interference.
The device is capable of delivering a peak envelope power (PEP) of 40 W, which is essential for high-power RF transmissions. The voltage rating of 45 V_RMS and a peak current of 0.9 A_PEAK further illustrate the switch's robust performance characteristics, allowing it to handle substantial power levels without degradation.
Control of the switch is versatile, as it can be actuated by various logic levels, including CMOS, TTL, and LS. This flexibility enables integration into different circuit designs, accommodating a range of control systems. The operation of the switch involves turning on Q1, which subsequently activates Q2, a TMOS MTP3N35. The TMOS technology contributes to efficient switching performance, with fast response times and low gate drive requirements, making it ideal for RF applications.
In summary, this RF power switch is a high-performance component tailored for RF applications, featuring low on-loss, high off-isolation, and capable of handling significant power levels, while offering flexible control options for integration into various electronic systems.This rf power switch operates at 1. 7 MHz with a 50-V source and load. Its on loss is 0.2 dB and its off isolation is 30 dB. It provides 40-W PEP, 45 VrEAK and 0.9 APEAK· The control input can come from CMOS, TTL, LS, etc., to turn on Q1, which turns on Q2, a TMOS MTP3N35. 🔗 External reference