A TMOS power FET, Q1, and an LM393 comparator provide a high-efficiency rectifier circuit. When voltage V1 exceeds V2, the output of U1 becomes high, and Q1 conducts. Conversely, when V2 exceeds V1, the comparator output becomes low, and Q1 does not conduct. The forward drop is determined by Q1's on-resistance and current I. The MTH40N05 has an on-resistance of 0.028 ohms; for I = 10 A, the forward drop is less than 0.3 V. Typically, the best Schottky diodes do not even begin conducting below a few hundred millivolts.
The described circuit utilizes a TMOS power FET, specifically the MTH40N05, which features a low on-resistance of 0.028 ohms, making it suitable for high-efficiency applications. The LM393 comparator serves as a voltage level detector, comparing two input voltages, V1 and V2. The operational behavior of the circuit is contingent upon the relationship between these two voltages. When V1 surpasses V2, the output of the LM393 transitions to a high state, activating the FET Q1, allowing current to flow through it. This conduction state is characterized by the FET's low on-resistance, which minimizes the forward voltage drop across it.
In scenarios where V2 exceeds V1, the output of the LM393 drops to a low state, resulting in the FET Q1 being turned off, thereby halting current flow. The efficiency of this rectifier circuit is further enhanced by the low forward voltage drop, which is particularly advantageous in power applications. At a current of 10 A, the forward drop across the MTH40N05 is less than 0.3 V, which is significantly lower than that of conventional Schottky diodes that typically require several hundred millivolts to commence conduction. This characteristic makes the TMOS FET an attractive alternative in high-efficiency rectification scenarios, where minimizing voltage loss is critical for overall performance.
The design of this circuit can be implemented in various applications, including power supplies and DC-DC converters, where efficiency and thermal management are paramount. The combination of the LM393 comparator and the TMOS FET enables a responsive and efficient rectification process, ensuring optimal performance in electronic systems.A TMOS power FET, Ql, and an LM393 comparator provide a high-efficiency rectifier circuit. When V,. exceeds V,, Ul"s output becomes high and Ql conducts. Conversely, when VB exceeds V,., the comparator output becomes low and Ql does not conduct. The forward drop is determined by Ql"s on resistance and current I. The MTH40N05 has an on resistance of 0. 028 !l; for I = 10 A, the forward drop is less than 0.3 V. Typically, the best Schottky diodes do not even begin conducting below a few hundred mV. 🔗 External reference
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