The CY6264 is a high-performance CMOS static RAM organized as 8,192 words by 8 bits. It is designed for applications requiring fast, low-power memory with simple interfacing. The device features an automatic power-down mode when deselected, reducing power consumption by over 70%. The CY6264 is housed in a 450-mil (300-mil body) SOIC package, making it suitable for space-constrained applications.
This SRAM is ideal for embedded systems, industrial controls, and other applications where reliable, high-speed memory is required. Its three-state outputs and dual chip enable inputs (CE1 and CE2) simplify memory expansion in larger systems.
The CY6264 is suitable for a wide range of applications including:
The CY6264 operates as follows:
The device is selected when CE1 is LOW and CE2 is HIGH. With OE LOW and WE HIGH, the data stored at the location specified by the address inputs (A0-A12) appears on the I/O pins (I/O0-I/O7). The outputs remain in high-impedance state when either OE is HIGH or the device is deselected (CE1 HIGH or CE2 LOW).
The device is selected when CE1 is LOW and CE2 is HIGH. With WE LOW, data on the I/O pins is written into the memory location specified by the address inputs. The OE signal is a "don't care" during write operations.
When CE1 is HIGH or CE2 is LOW, the device enters power-down mode, reducing power consumption significantly. The I/O pins enter high-impedance state regardless of OE or WE inputs.
The CY6264 is available in a 28-pin Small Outline Integrated Circuit (SOIC) package with the following dimensions:
The 28-pin SOIC package has the following pinout:
The CY6264 is available in different speed grades and temperature ranges:
The CY6264 meets or exceeds the following quality and reliability standards: