K4F641612C 4Mx16 Fast Page Mode DRAM

Overview

The K4F641612C is a high-performance 4Mx16 Fast Page Mode Dynamic Random Access Memory (DRAM) component manufactured by Samsung Electronics using advanced CMOS technology. This device offers a balanced combination of high bandwidth, low power consumption, and reliable operation, making it suitable for various memory-intensive applications. The component supports multiple refresh modes including CAS-before-RAS, RAS-only, Hidden refresh, and Self-refresh (L-version only), providing flexibility in different system environments.

With its 3.3V LVTTL-compatible interface and JEDEC-standard pinout, the K4F641612C ensures easy integration into modern electronic systems. The device is available in industry-standard Plastic TSOP(II) packages, offering both space efficiency and reliable performance.

Key Features

• Memory Organization: 4M words x 16 bits configuration
• Fast Page Mode Operation: Enables faster access to data within the same row
• Dual CAS Control: Supports Byte/Word Read/Write operations using UCAS and LCAS
• Advanced Refresh Modes:
  • CAS-before-RAS refresh capability
  • RAS-only refresh capability
  • Hidden refresh capability
  • Self-refresh capability (L-version only)
• Fast Parallel Test Mode: Facilitates efficient production testing
• LVTTL Compatibility: 3.3V compatible inputs and outputs
• Write Operation Options: Supports both Early Write and Output Enable controlled write modes
• Standard Compliance: JEDEC standard pinout for easy system integration
• Package Options: Available in Plastic TSOP(II) packages
• Power Supply: Single +3.3V ±0.3V power supply

Applications

The K4F641612C is designed for use in a wide range of electronic systems requiring reliable, high-performance memory solutions:

• Computer systems and workstations
• Networking equipment (routers, switches)
• Telecommunications infrastructure
• Industrial control systems
• Embedded systems
• Test and measurement equipment
• Medical electronics
• Consumer electronics with memory-intensive requirements

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (Vcc): -0.5V to +4.6V
• Input Voltage (Vin): -0.5V to Vcc+0.5V
• Output Voltage (Vout): -0.5V to Vcc+0.5V
• Operating Temperature Range: 0°C to +70°C (Commercial)
• Storage Temperature Range: -55°C to +125°C

Recommended Operating Conditions

• Supply Voltage (Vcc): 3.0V to 3.6V (3.3V ± 0.3V)
• Operating Temperature: 0°C to +70°C
• Input High Voltage (VIH): 2.0V min (Vcc = 3.0V)
• Input Low Voltage (VIL): 0.8V max (Vcc = 3.0V)

DC Characteristics

• Input Leakage Current (Iin): ±1μA max
• Output Leakage Current (Ioz): ±1μA max
• Operating Current (Icc1): TBD mA max (Active)
• Standby Current (Icc2): TBD μA max (CMOS level)
• Refresh Current (Icc3): TBD mA max

AC Characteristics

• RAS Precharge Time (tRP): 20ns min
• CAS Precharge Time (tCP): 20ns min
• RAS to CAS Delay Time (tRCD): 20ns min
• CAS Pulse Width (tCAS): 20ns min
• Access Time from CAS (tCAC): 15ns max
• Access Time from RAS (tRAC): 60ns max
• Write Pulse Width (tWP): 15ns min
• Data-in Setup Time (tDS): 10ns min
• Data-in Hold Time (tDH): 0ns min

Package Information

TSOP(II) Package Dimensions

• Package Type: 54-pin Plastic TSOP(II)
• Package Body Size: 22.2mm x 10.2mm (nominal)
• Lead Pitch: 0.8mm
• Lead Count: 54 leads (27 per side)
• Package Height: 1.2mm max
• Moisture Sensitivity Level (MSL): MSL 3 (per J-STD-020)

Pin Configuration

The K4F641612C follows standard JEDEC pinout for 4Mx16 DRAM devices:

• Address Inputs: A0-A11 (12-bit row/column addressing)
• Data I/O: DQ0-DQ15 (16-bit bidirectional data bus)
• Control Signals:
  • RAS: Row Address Strobe
  • UCAS, LCAS: Upper and Lower Column Address Strobes
  • W: Write Enable
• Power Supplies:
  • Vcc: +3.3V power supply
  • Vss: Ground

Functional Description

Memory Architecture

The K4F641612C organizes its 67,108,864 bits of storage as 4,194,304 words of 16 bits each. The memory array is divided into four banks of 1,048,576 words each, with each bank being independently addressable. This architecture enables efficient memory management and faster access times through bank interleaving techniques.

Refresh Operations

The device supports several refresh modes to maintain data integrity:

• CAS-before-RAS Refresh: Initiated by asserting CAS before RAS, with refresh address generated internally
• RAS-only Refresh: Initiated by RAS alone, with external address required
• Hidden Refresh: Combines refresh with active operation for improved performance
• Self Refresh (L-version): Automatic refresh controlled by internal timer, ideal for low-power applications

Data Operations

The K4F641612C supports various