HB52E169E12 16M × 72 Synchronous Dynamic RAM Registered Module

Overview

The HB52E169E12 is a high-performance 8-byte DIMM (Dual In-line Memory Module) designed as an optimized main memory solution for 8-byte processor applications. This module integrates 18 pieces of 64-Mbit SDRAM (HM5264405FTT) in TSOP packages, along with a PLL clock driver, register drivers, and a serial EEPROM for Presence Detect (PD). The module is housed in a 168-pin socket-type package, enabling high-density mounting without requiring surface-mount technology. The HB52E169E12 is fully compliant with JEDEC standards and Intel's PCB reference design, making it a reliable choice for demanding computing environments.

Features

• Compliance: Fully compatible with JEDEC standard outline registered 8-byte DIMM and Intel PCB Reference Design (Rev. 1.2).
• Package: 168-pin socket type package (dual lead out).
• Dimensions: 133.37 mm (Length) × 43.18 mm (Height) × 4.00 mm (Thickness).
• Lead pitch: 1.27 mm.
• Power Supply: 3.3 V operation.
• Clock Frequency: Up to 100 MHz.
• Interface: LVTTL.
• Data Bus Width: ×72 ECC (Error Correction Code).
• Memory Banks: 4 banks capable of simultaneous and independent operation.
• Burst Operations: Supports burst read/write and burst read/single write operations.
• Programmable Burst Length: 1, 2, 4, 8, or full page.
• Burst Sequence: Sequential (BL = 1/2/4/8/full page) or Interleave (BL = 1/2/4/8).
• CAS Latency: Programmable to 3/4 (HB52E169E12-A6F) or 4 (HB52E169E12-B6F).
• Byte Control: Managed by DQMB signals.
• Refresh Cycles: 4096 refresh cycles per 64 ms.
• Refresh Modes: Auto-refresh and self-refresh.
• Full Page Burst: Supports sequential burst with burst stop capability.

Applications

The HB52E169E12 is designed for high-performance computing systems requiring reliable and high-density memory solutions. Key applications include:

• Enterprise Servers: Suitable for mission-critical applications requiring ECC support.
• Workstations: High-speed memory for intensive computational tasks.
• Networking Equipment: Used in routers and switches where high bandwidth and reliability are essential.
• Embedded Systems: Ideal for systems requiring robust memory performance in constrained environments.

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (V_DD): -0.5 V to +4.6 V.
• Input Voltage (V_IN): -0.5 V to V_DD + 0.5 V.
• Operating Temperature: 0°C to +70°C (commercial grade).
• Storage Temperature: -55°C to +125°C.

Recommended Operating Conditions

• Supply Voltage (V_DD): 3.3 V ± 0.3 V.
• Clock Frequency: Up to 100 MHz.
• Input High Voltage (V_IH): 2.0 V min.
• Input Low Voltage (V_IL): 0.8 V max.

Timing Parameters

• CAS Latency: 3 or 4 clock cycles (programmable).
• RAS to CAS Delay (t_RCD): 20 ns (min).
• Row Precharge Time (t_RP): 20 ns (min).
• Active to Precharge Time (t_RAS): 50 ns (min).

Package Information

Mechanical Specifications

• Package Type: 168-pin dual lead-out socket type.
• Dimensions: 133.37 mm × 43.18 mm × 4.00 mm.
• Lead Pitch: 1.27 mm.
• Contact Pad: Gold-plated pins for enhanced conductivity and corrosion resistance.

Ordering Information

• HB52E169E12-A6F: 100 MHz, CAS Latency 3/4, 168-pin socket type.
• HB52E169E12-B6F: 100 MHz, CAS Latency 4, 168-pin socket type.

Pin Arrangement

The 168-pin configuration includes address lines, data I/O, control signals, and power/ground pins. A detailed pinout diagram should be referenced from the datasheet for exact pin assignments.

Conclusion

The HB52E169E12 is a high-performance, JEDEC-compliant registered DIMM module designed for demanding computing environments. With its 72-bit ECC support, programmable burst operations, and robust electrical characteristics, it is an excellent choice for servers, workstations, and networking equipment. The module's 168-pin socket-type package ensures easy integration while maintaining high reliability and performance.