HB52R2569E2
HB52R2569E2 128M × 72 × 2-Bank Synchronous Dynamic RAM Module Technical Summary
Overview
The HB52R2569E2 is a high-performance 8-byte DIMM (Dual In-line Memory Module) designed as an optimized main memory solution for 8-byte processor applications. This module integrates 72 pieces of 256-Mbit SDRAM (HM5225205BTB) in TCP packaging, along with a PLL clock driver, register drivers, and a serial EEPROM for Presence Detect (PD). The module's 168-pin socket-type package (dual lead-out) enables high-density mounting without requiring surface-mount technology, making it suitable for space-constrained applications.
The HB52R2569E2 operates with a 3.3V power supply and supports a maximum clock frequency of 100 MHz. It features a 72-bit ECC data bus width, programmable burst lengths, and multiple refresh modes, ensuring reliable performance in demanding computing environments.
Key Features
- Package: 168-pin socket type (dual lead-out)
- Dimensions: 133.37 mm (length) × 53.34 mm (height) × 4.80 mm (thickness)
- Lead pitch: 1.27 mm
- Power Supply: 3.3V
- Clock Frequency: Up to 100 MHz
- Interface: LVTTL
- Data Bus Width: ×72 ECC
- Bank Configuration: 4 banks capable of simultaneous and independent operation
- Burst Operation: Supports burst read/write and burst read/single write operations
- Programmable Burst Length: 1, 2, 4, or 8
- Burst Sequence Options: Sequential or Interleave
- Programmable CAS Latency: 3 or 4 (HB52R2569E2-A6B), fixed at 4 (HB52R2569E2-B6B)
- Byte Control: Managed by DQMB
- Refresh Cycles: 8192 refresh cycles per 64 ms
- Refresh Modes: Auto refresh and Self refresh
Applications
The HB52R2569E2 is designed for use in high-performance computing systems where reliable, high-density memory is required. Typical applications include:
- Server and workstation memory expansion
- High-performance computing clusters
- Data center infrastructure
- Enterprise storage systems
- Telecommunications equipment
- Embedded systems requiring large memory capacity
Electrical Characteristics
The HB52R2569E2 operates within the following electrical parameters:
- Supply Voltage (VDD): 3.3V ± 0.3V
- Input High Voltage (VIH): 2.0V min
- Input Low Voltage (VIL): 0.8V max
- Output High Voltage (VOH): 2.4V min @ IOH = -4.0 mA
- Output Low Voltage (VOL): 0.4V max @ IOL = 8.0 mA
- Operating Temperature Range: 0°C to +70°C (commercial grade)
- Clock Frequency: 100 MHz maximum
- Power Consumption: Active: TBD, Standby: TBD (values to be specified in datasheet)
Package Information
The HB52R2569E2 comes in a 168-pin dual lead-out socket type package with the following specifications:
- Package Type: 168-pin socket type (dual lead-out)
- Dimensions:
- Length: 133.37 mm
- Height: 53.34 mm
- Thickness: 4.80 mm
- Lead Pitch: 1.27 mm
- Contact Pad: Gold-plated for reliable connections
Ordering Information
The HB52R2569E2 is available in two variants:
| Type No. | Frequency | CAS Latency | Package | Contact Pad |
|---|---|---|---|---|
| HB52R2569E2-A6B | 100 MHz | 3 or 4 | 168-pin dual lead-out socket type | Gold |
| HB52R2569E2-B6B | 100 MHz | 4 | 168-pin dual lead-out socket type | Gold |
Pin Arrangement
The 168-pin package has the following key pin locations:
- Pin 1: Starting pin
- Pins 10-11: Critical control pins
- Pin 40-41: Mid-module location
- Pin 84: Center point
- Pins 85, 94-95: Secondary control pins
- Pins 124-125: Pre-terminal pins
- Pin 168: Final pin
Functional Description
The HB52R2569E2 operates as a synchronous DRAM module, with all operations synchronized to the positive edge of the clock signal. The module supports:
- Burst Operations: The programmable burst length (1, 2, 4, or 8) allows efficient data transfer for various application requirements.
- Bank Management: Four independent banks enable concurrent operations, improving overall memory throughput.
- Refresh Management: Both auto refresh and self refresh modes are supported, with 8192 refresh cycles required every 64ms to maintain data integrity.
- Error Correction: The ×72 ECC capability provides single-bit error correction and double-bit error detection for improved data reliability.
Thermal Considerations
While specific thermal characteristics are not provided in the available information, the following general guidelines apply:
- The module should be operated within the specified temperature range (0°C to +70°C)
- Adequate airflow should be maintained in the system to prevent thermal throttling
- Heat spreaders or additional cooling may be required in high-density installations
Reliability and Quality
The HB52R2569E2 is designed for high reliability in demanding applications:
- All components are industrial-grade quality
- Gold-plated contacts ensure reliable connections
- Comprehensive testing is performed during manufacturing
- ECC support enhances data integrity
