M27C801 8 Mbit EPROM Technical Summary

Overview

The M27C801 is an 8 Mbit (1 Megabyte) UV-erasable and electrically programmable read-only memory (EPROM) designed for applications requiring non-volatile storage. This component provides reliable data retention and high-speed access, making it suitable for a wide range of embedded systems and legacy applications. The device is organized as 1,048,576 words of 8 bits each, offering flexible memory architecture for various design needs.

Key advantages of the M27C801 include its industrial temperature range support, low power consumption in standby mode, and compatibility with standard EPROM programmers. The device features a transparent quartz window that allows UV light exposure for erasure, typically requiring 15-20 minutes under a UV eraser.

Features

• High Density Storage: 8 Mbit capacity (1M x 8 organization)
• Fast Access Time: 120 ns maximum access time
• Low Power Consumption: 30 mA active current, 100 μA standby current
• Single 5V Power Supply: Operates from 4.5V to 5.5V
• UV Erasable: Full chip erasure via UV exposure
• Programmable: Standard EPROM programming algorithm
• Three-State Outputs: For bus-oriented applications
• Industrial Temperature Range: -40°C to +85°C operation
• CMOS Technology: For improved power efficiency
• JEDEC Standard Pinout: Compatible with industry standards

Applications

The M27C801 is suitable for a wide range of applications including:

• Legacy computer systems and upgrades
• Industrial control systems
• Telecommunications equipment
• Automotive electronics (non-safety critical)
• Medical instrumentation
• Military and aerospace systems
• Embedded controller firmware storage
• Development systems and prototyping
• Firmware storage for test equipment
• Retro computing and preservation projects

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (VCC): -0.6V to +7.0V
• Input Voltage: -0.6V to VCC + 0.6V
• Output Voltage: -0.6V to VCC + 0.6V
• Storage Temperature: -65°C to +150°C
• Operating Temperature: -40°C to +85°C

DC Characteristics (TA = -40°C to +85°C, VCC = 5V ± 10%)

• Input Leakage Current (II): ±10 μA max
• Output Leakage Current (IOZ): ±10 μA max
• VIL Input Low Voltage: -0.5V to 0.8V
• VIH Input High Voltage: 2.0V to VCC + 0.5V
• VOL Output Low Voltage: 0.45V max (IOL = 2.1 mA)
• VOH Output High Voltage: 2.4V min (IOH = -400 μA)
• ICC Active Current: 30 mA max (f = 5 MHz)
• ISB Standby Current: 100 μA max

AC Characteristics

• Address Access Time (tAA): 120 ns max
• Chip Enable Access Time (tCE): 120 ns max
• Output Enable Access Time (tOE): 50 ns max
• Chip Enable to Output Float (tDF): 40 ns max
• Output Hold Time (tOH): 0 ns min
• Read Cycle Time (tRC): 120 ns min

Package Information

32-Pin Plastic DIP (PDIP)

• Package Code: P32
• Dimensions: 42.04mm x 13.97mm
• Pin Pitch: 2.54mm (100 mil)
• Lead Material: Alloy 42 or copper alloy
• Lead Finish: Matte tin or solder dipped
• Window Material: Fused quartz
• Weight: Approximately 4.5 grams

32-Pin PLCC (Plastic Leaded Chip Carrier)

• Package Code: PL32
• Dimensions: 13.97mm x 13.97mm
• Lead Count: 32 (J-lead)
• Lead Pitch: 1.27mm (50 mil)
• Window Material: Fused quartz (center window)
• Weight: Approximately 2.2 grams

Programming Specifications

The M27C801 uses standard EPROM programming algorithms with the following characteristics:

• Programming Voltage (VPP): 12.5V ± 0.5V
• Programming Pulse Width: 50 μs typical
• Programming Algorithm: Intelligent programming with verification
• Programming Cycles: Minimum 100 erase/program cycles guaranteed
• Data Retention: 10 years minimum at 55°C
• Programming Temperature: 0°C to +45°C recommended

Erase Characteristics

• Erasure Method: UV light exposure
• Wavelength: 2537 Å (angstroms)
• Intensity: 12,000 μW/cm² minimum
• Erase Time: 15-20 minutes typical
• Post-Erase Verification: Required to confirm blank state

Handling and Storage

Proper handling procedures should be followed to maintain data integrity:

• Always cover the quartz window with opaque tape after programming
• Store in dark, dry environments to prevent accidental erasure
• Use proper ESD precautions during handling
• Avoid exposure to fluorescent lighting for extended periods
• Recommended storage temperature: -40°C to +85°C