K4E640811C 8Mx8 EDO Mode DRAM

Overview

The K4E640811C is an 8Mx8 Extended Data Out (EDO) Mode Dynamic Random-Access Memory (DRAM) component fabricated using Samsung's advanced CMOS process. This device is designed to deliver high bandwidth and low power consumption, making it suitable for a variety of computing and embedded applications. The DRAM features multiple refresh modes, including CAS-before-RAS (CBR) refresh, RAS-only refresh, and Hidden refresh, ensuring efficient memory management and data retention.

Features

• High Bandwidth: Optimized for high-speed data access with EDO mode support.
• Low Power Consumption: Fabricated using advanced CMOS technology to minimize power usage.
• Multiple Refresh Modes: Supports CAS-before-RAS (CBR) refresh, RAS-only refresh, and Hidden refresh for flexible memory management.
• 4K Refresh Cycles: Ensures reliable data retention with efficient refresh cycles.
• 8Mx8 Organization: Provides 8 Megabits of memory organized as 8 million words of 8 bits each.
• EDO Mode: Enhances performance by allowing data to be accessed more quickly than standard DRAM.

Applications

The K4E640811C is suitable for a wide range of applications, including but not limited to:

• Computing Systems: Used in personal computers, workstations, and servers for main memory or cache applications.
• Embedded Systems: Ideal for industrial control systems, networking equipment, and telecommunications devices.
• Consumer Electronics: Found in gaming consoles, set-top boxes, and multimedia devices requiring efficient memory solutions.
• Automotive Systems: Utilized in infotainment and navigation systems where reliable memory performance is critical.

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (Vcc): -0.5V to +4.6V
• Input Voltage (Vin): -0.5V to Vcc + 0.5V
• Operating Temperature Range: 0°C to +70°C
• Storage Temperature Range: -55°C to +125°C

Recommended Operating Conditions

• Supply Voltage (Vcc): 3.3V ± 0.3V
• Input High Voltage (Vih): 2.0V min
• Input Low Voltage (Vil): 0.8V max
• Operating Frequency: Up to 66MHz (dependent on system configuration)

DC Characteristics

• Standby Current (Isb): 10µA max (at 3.3V, 25°C)
• Operating Current (Icc): 80mA max (at 3.3V, 25°C)
• Output High Voltage (Voh): 2.4V min (at Ioh = -4.0mA)
• Output Low Voltage (Vol): 0.4V max (at Iol = 8.0mA)

AC Characteristics

• RAS Access Time (tRAC): 60ns max
• CAS Access Time (tCAC): 15ns max
• RAS Precharge Time (tRP): 20ns min
• CAS Precharge Time (tCP): 15ns min
• Write Pulse Width (tWP): 25ns min
• Refresh Cycle Time (tRC): 64ms max

Package Information

Physical Dimensions

The K4E640811C is available in a standard 400-mil 28-pin Plastic Dual In-line Package (PDIP) and a 300-mil 28-pin Small Outline Integrated Circuit (SOIC) package. Below are the detailed dimensions for each package type:

28-Pin PDIP Package

• Package Width: 400 mil (10.16mm)
• Package Length: 600 mil (15.24mm)
• Lead Pitch: 100 mil (2.54mm)
• Lead Count: 28 pins
• Material: Plastic, RoHS compliant

28-Pin SOIC Package

• Package Width: 300 mil (7.62mm)
• Package Length: 400 mil (10.16mm)
• Lead Pitch: 50 mil (1.27mm)
• Lead Count: 28 pins
• Material: Plastic, RoHS compliant

Pin Configuration

The pin configuration for the K4E640811C is as follows:

• Pin 1: A10 (Address Input 10)
• Pin 2: A0 (Address Input 0)
• Pin 3: A1 (Address Input 1)
• Pin 4: A2 (Address Input 2)
• Pin 5: A3 (Address Input 3)
• Pin 6: Vcc (Power Supply)
• Pin 7: WE (Write Enable)
• Pin 8: RAS (Row Address Strobe)
• Pin 9: CAS (Column Address Strobe)
• Pin 10: DQ0 (Data Input/Output 0)
• Pin 11: DQ1 (Data Input/Output 1)
• Pin 12: DQ2 (Data Input/Output 2)
• Pin 13: DQ3 (Data Input/Output 3)
• Pin 14: GND (Ground)
• Pin 15: DQ4 (Data Input/Output 4)
• Pin 16: DQ5 (Data Input/Output 5)
• Pin 17: DQ6 (Data Input/Output 6)
• Pin 18: DQ7 (Data Input/Output 7)
• Pin 19: A4 (Address Input 4)
• Pin 20: A5 (Address Input 5)
• Pin 21: A6 (Address Input 6)
• Pin 22: A7 (Address Input 7)