Technical Summary: K4E661611C 4Mx16 EDO Mode DRAM

Overview

The K4E661611C is a high-performance 4Mx16 Extended Data Out (EDO) Mode Dynamic Random-Access Memory (DRAM) component manufactured by Samsung. This device is designed to provide high bandwidth, low power consumption, and reliable operation for memory-intensive applications. It is part of a DRAM family that includes variants with different refresh cycle configurations, such as the K4E661611C-TC (8K refresh) and K4E641611C-TC (4K refresh). The component is fabricated using Samsung's advanced CMOS process, ensuring high-speed operation and robust performance.

The K4E661611C supports various refresh modes, including CAS-before-RAS refresh, RAS-only refresh, and Hidden refresh, making it versatile for different system requirements. It is housed in a Plastic TSOP(II) package and operates with a +5.0V ±10% power supply, making it compatible with standard TTL logic levels.

Features

• Extended Data Out (EDO) Mode Operation: Enhances data throughput by allowing data to remain valid on the output pins even after the CAS signal is deasserted.
• 2 CAS Byte/Word Read/Write Operation: Supports flexible data access modes, enabling byte or word-level operations.
• Multiple Refresh Modes: Includes CAS-before-RAS refresh, RAS-only refresh, and Hidden refresh capabilities for efficient memory management.
• Fast Parallel Test Mode: Facilitates rapid testing and validation of the memory array during production.
• TTL-Compatible Inputs and Outputs: Ensures seamless integration with standard 5V TTL logic circuits.
• Early Write or Output Enable Controlled Write: Provides flexibility in write timing control.
• JEDEC Standard Pinout: Complies with industry-standard pin configurations for ease of design and compatibility.
• Plastic TSOP(II) Package: Compact and surface-mountable package suitable for high-density PCB designs.
• Wide Power Supply Range: Operates at +5.0V ±10%, accommodating typical power supply variations.

Applications

The K4E661611C is well-suited for a variety of applications that require high-speed, high-density memory solutions. Key application areas include:

• Computer Systems: Used as main memory or cache in desktops, workstations, and servers.
• Embedded Systems: Ideal for industrial control systems, medical devices, and telecommunications equipment.
• Graphics and Multimedia: Supports high-bandwidth requirements for video processing and graphics rendering.
• Networking Equipment: Suitable for routers, switches, and other networking devices that demand fast data access.
• Consumer Electronics: Used in gaming consoles, set-top boxes, and other high-performance consumer devices.

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (Vcc): -0.5V to +7.0V
• Input Voltage (Vin): -0.5V to Vcc + 0.5V
• Output Voltage (Vout): -0.5V to Vcc + 0.5V
• Operating Temperature Range: 0°C to +70°C
• Storage Temperature Range: -55°C to +125°C

Recommended Operating Conditions

• Supply Voltage (Vcc): +5.0V ±10%
• Input High Voltage (VIH): 2.0V min
• Input Low Voltage (VIL): 0.8V max
• Operating Temperature: 0°C to +70°C

DC Characteristics

• Input Leakage Current (Iin): ±1.0µA max
• Output Leakage Current (Iout): ±1.0µA max
• Standby Current (Isb): 10mA max
• Operating Current (Icc): 120mA max (typical)

AC Characteristics

• RAS to CAS Delay (tRCD): 20ns max
• CAS Pulse Width (tCAS): 20ns min
• RAS Precharge Time (tRP): 20ns min
• Access Time from CAS (tCAC): 15ns max
• Data Hold Time (tDH): 10ns min

Package Information

The K4E661611C is available in a Plastic Thin Small Outline Package (TSOP) Type II, which is designed for surface-mount applications. The package dimensions and pin configuration are as follows:

Package Dimensions (TSOP-II)

• Package Type: 44-pin TSOP(II)
• Body Width: 10.16mm
• Body Length: 18.41mm
• Lead Pitch: 0.8mm
• Lead Count: 44

Pin Configuration

The pinout of the K4E661611C follows the JEDEC standard for 4Mx16 DRAMs. Key pins include:

• DQ0-DQ15: Data input/output pins for 16-bit data bus.
• RAS: Row Address Strobe, latches row addresses.
• UCAS, LCAS: Upper and Lower Column Address Strobes for byte/word control.
• W: Write Enable, controls write operations.
• OE: Output Enable, controls data output buffers.
• Vcc, Vss: Power supply (+5V) and ground pins.

Functional Description

The K4E661611C operates as a 4Mx16 DRAM with EDO mode capability. The internal architecture includes:

• Row and Column Decoders: Selects specific memory cells based on address inputs.
• Sense Amplifiers: Detects and amplifies the data stored in memory cells.
• Refresh Control: Manages automatic refresh cycles to maintain data integrity.
• Data Buffers: Temporarily holds data during read/write operations.

The device supports early write and output enable-controlled write modes, providing flexibility in timing control. The EDO mode allows for faster data access by extending the validity of output data beyond the CAS signal, improving system performance.

Conclusion

The K4E661611C is a versatile and high-performance 4Mx16 EDO DRAM suitable for a wide range of applications. Its advanced features, including multiple refresh modes, TTL compatibility, and JEDEC-standard pinout, make it an excellent choice for designers seeking reliable and high-speed memory solutions. The TSOP(II) package ensures compact and efficient PCB integration, while the robust electrical characteristics guarantee stable operation under varying conditions.