Technical Summary: K4F640412C 16Mx4 Fast Page Mode DRAM

Overview

The K4F640412C is a 16Mx4 Fast Page Mode Dynamic Random Access Memory (DRAM) component manufactured using Samsung's advanced CMOS process technology. This high-performance memory solution offers 67,108,864 bits (64Mb) of storage organized as 16,777,216 words by 4 bits. Designed for applications requiring high bandwidth and low power consumption, this DRAM family features multiple refresh modes and operates with a 3.3V power supply.

The device supports various refresh capabilities including CAS-before-RAS refresh, RAS-only refresh, and Hidden refresh, with Self-refresh operation available in the L-version. Its architecture and design make it particularly suitable for systems requiring efficient memory management and power conservation.

Key Features

• Memory Organization: 16,777,216 words × 4 bits (64Mb)
• Operation Mode: Fast Page Mode operation for improved performance
• Refresh Capabilities:
  • CAS-before-RAS refresh
  • RAS-only refresh
  • Hidden refresh
  • Self-refresh capability (L-version only)
• Test Mode: Fast parallel test mode capability for efficient production testing
• Compatibility: LVTTL (3.3V) compatible inputs and outputs
• Write Options: Supports both Early Write and output enable controlled write operations
• Standard Compliance: JEDEC standard pinout for easy integration
• Packaging Options: Available in Plastic SOJ and TSOP(II) packages
• Power Supply: +3.3V ±0.3V operation

Applications

The K4F640412C is designed for use in a wide range of electronic systems requiring reliable, high-performance memory solutions. Typical applications include:

• Computer systems and workstations
• Networking equipment (routers, switches)
• Telecommunications infrastructure
• Embedded systems
• Industrial control systems
• Test and measurement equipment
• Graphics subsystems
• Consumer electronics with memory-intensive operations

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (Vcc): -0.5V to +4.6V
• Input Voltage (Vin): -0.5V to Vcc + 0.5V
• Output Voltage (Vout): -0.5V to Vcc + 0.5V
• Operating Temperature: 0°C to +70°C (Commercial)
• Storage Temperature: -55°C to +125°C

Recommended Operating Conditions

• Supply Voltage (Vcc): 3.0V to 3.6V (3.3V ± 0.3V)
• Input High Voltage (VIH): 2.0V to Vcc + 0.3V
• Input Low Voltage (VIL): -0.3V to 0.8V
• Operating Temperature Range: 0°C to +70°C

DC Characteristics

• Input Leakage Current (Iin): ±1μA (max)
• Output Leakage Current (Ioz): ±1μA (max)
• Operating Current (Icc1): TBD mA (typical)
• Standby Current (Icc2): TBD μA (typical)
• Refresh Current (Icc3): TBD mA (typical)

AC Characteristics

• RAS Access Time (tRAC): TBD ns (max)
• CAS Access Time (tCAC): TBD ns (max)
• RAS Precharge Time (tRP): TBD ns (min)
• CAS Precharge Time (tCP): TBD ns (min)
• Write Pulse Width (tWP): TBD ns (min)
• Refresh Cycle Time (tRC): TBD μs (max)

Package Information

The K4F640412C is available in two industry-standard package options:

Plastic SOJ (Small Outline J-Lead) Package

• Package Code: 42-pin SOJ
• Dimensions: TBD mm × TBD mm × TBD mm
• Pin Pitch: 1.27mm
• Lead Count: 42

TSOP(II) (Thin Small Outline Package) Type II

• Package Code: 44-pin TSOP(II)
• Dimensions: TBD mm × TBD mm × TBD mm
• Pin Pitch: 0.8mm
• Lead Count: 44

Functional Description

The K4F640412C operates in Fast Page Mode, allowing faster access to data within the same row by maintaining the row address and changing only the column address. This significantly reduces access time for sequential memory operations.

The device supports multiple refresh methods to maintain data integrity:

• CAS-before-RAS Refresh: The internal refresh counter is used when CAS is asserted before RAS
• RAS-only Refresh: The external address is used as the refresh address when only RAS is toggled
• Hidden Refresh: Allows refresh operations without affecting output data
• Self Refresh (L-version only): Enables ultra-low power operation by internally generating refresh cycles

Ordering Information

The complete ordering code for the K4F640412C includes the following elements:

• Speed Grade: Indicated by a suffix (e.g., -X for X ns access time)
• Package Type: SOJ or TSOP(II) options
• Temperature Grade: Commercial (0°C to +70°C) or Industrial (-40°C to +85°C)
• Special Features: L-version for Self-refresh capability

Quality and Reliability

Samsung Electronics guarantees the highest standards of quality and reliability for the K4F640412C DRAM family. All devices undergo rigorous testing and qualification procedures including:

• Burn-in testing
• Temperature cycling
• Humidity testing
• ESD protection verification
• Long-term reliability monitoring

Samsung Electronics Co., Ltd. reserves the right to make changes to products and specifications without notice. For the most current technical information, please consult the latest datasheet or contact Samsung's technical support team.