K4F641611C 4Mx16 Fast Page Mode DRAM Technical Summary

Overview

The K4F641611C is a high-performance 4Mx16 Fast Page Mode Dynamic Random Access Memory (DRAM) component manufactured using Samsung's advanced CMOS process technology. This device offers a balance of high bandwidth, low power consumption, and exceptional reliability for memory-intensive applications. Organized as 4,194,304 words by 16 bits, this DRAM features multiple refresh modes and flexible operation capabilities that make it suitable for a wide range of computing and embedded systems.

As part of Samsung's DRAM family, the K4F641611C maintains compatibility with standard DRAM interfaces while providing enhanced features for improved system performance. The device operates with a 5V power supply (±10% tolerance) and offers TTL-compatible inputs and outputs for easy integration with various system architectures.

Key Features

Architecture and Performance

• 4,194,304 words × 16-bit organization (4Mx16)
• Fast Page Mode operation for reduced access latency
• 2CAS Byte/Word Read/Write operation capability
• High bandwidth data transfer architecture

Refresh Capabilities

• CAS-before-RAS (CBR) refresh capability
• RAS-only refresh mode
• Hidden refresh capability for improved system performance

Interface and Compatibility

• TTL (5.0V) compatible inputs and outputs
• JEDEC standard pinout for easy replacement and compatibility
• Early Write or output enable controlled write options

Testing and Manufacturing

• Fast parallel test mode capability for production efficiency
• Plastic TSOP(II) package for reliable surface mounting
• Advanced CMOS process technology for low power consumption

Applications

The K4F641611C DRAM is designed for use in a variety of computing and embedded applications that require reliable, high-performance memory solutions:

Computer Systems

• Legacy PC and workstation memory subsystems
• Industrial computing platforms
• Embedded computing systems

Embedded Applications

• Telecommunications equipment
• Networking devices
• Industrial control systems

Specialized Applications

• Test and measurement equipment
• Medical instrumentation
• Military and aerospace systems (with appropriate qualification)

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (Vcc): -0.5V to +7.0V
• Input Voltage (Vin): -0.5V to Vcc + 0.5V
• Operating Temperature Range: 0°C to +70°C (Commercial)
• Storage Temperature Range: -55°C to +125°C

Recommended Operating Conditions

• Supply Voltage (Vcc): 4.5V to 5.5V (5.0V ±10%)
• Input High Voltage (VIH): 2.2V min to Vcc + 0.3V max
• Input Low Voltage (VIL): -0.3V min to 0.8V max
• Operating Temperature: 0°C to +70°C

DC Characteristics

• Input Leakage Current (Ili): ±1μA max
• Output Leakage Current (Ilo): ±1μA max
• Operating Current (Icc1): TBD mA max (Active)
• Standby Current (Icc2): TBD mA max (RAS = VIH)
• Refresh Current (Icc3): TBD mA max

AC Characteristics

• RAS Precharge Time (tRP): 20ns min
• CAS Precharge Time (tCP): 20ns min
• RAS to CAS Delay Time (tRCD): 20ns min
• CAS Pulse Width (tCAS): 20ns min
• Access Time from CAS (tCAC): 15ns max
• Access Time from RAS (tRAC): 60ns max

Package Information

TSOP(II) Package Details

• Package Type: 44-pin Plastic Thin Small Outline Package (TSOP(II))
• Package Dimensions: 10.16mm × 18.41mm × 1.2mm (typical)
• Lead Pitch: 0.8mm
• Lead Count: 44
• Moisture Sensitivity Level (MSL): 3 (according to J-STD-020)

Pin Configuration

The K4F641611C follows the JEDEC standard pinout for 4Mx16 DRAM devices. The 44-pin TSOP(II) package includes:

• 16 data I/O pins (DQ0-DQ15)
• 11 address input pins (A0-A10)
• Row Address Strobe (RAS)
• Column Address Strobe (CAS)
• Upper and Lower Byte Control (UCAS, LCAS)
• Write Enable (W)
• Output Enable (G)
• Power (Vcc) and Ground (Vss) pins

Functional Description

Memory Organization

The K4F641611C is organized as 4,194,304 words of 16 bits each. The memory array is divided into rows and columns, with address multiplexing used to reduce pin count. The device uses a 2CAS architecture that allows for byte-wide (upper or lower) or word-wide (16-bit) operations.

Refresh Operation

The device supports three refresh modes:

• CAS-before-RAS (CBR) Refresh: The traditional refresh method where CAS is asserted before RAS
• RAS-only Refresh: Only RAS needs to be cycled for refresh operations
• Hidden Refresh: Allows refresh operations to occur while maintaining valid data outputs

Fast Page Mode Operation

The Fast Page Mode capability allows for faster access to multiple bits within a row by maintaining the row address (RAS) while changing column addresses (CAS). This significantly reduces access time for sequential memory locations within the same row.

Ordering Information

The K4F641611C is available in the following standard configurations:

• Speed grades: -6 (60ns), -7 (70ns), etc. (specific speed grades may vary)
• Package options: 44-pin TSOP(II) only
• Temperature range: Commercial (0°C to +70°C)

For specific ordering information, please consult the latest Samsung Semiconductor datasheet or contact your local Samsung representative.