K4F660812D 8Mx8 Fast Page Mode DRAM

Overview

The K4F660812D is an 8Mx8 Fast Page Mode Dynamic Random-Access Memory (DRAM) designed for high-performance, low-power applications. Fabricated using Samsung's advanced CMOS process, this component delivers high bandwidth, low power consumption, and high reliability. It supports multiple refresh modes, including CAS-before-RAS, RAS-only, Hidden refresh, and Self-refresh (L-version only). The device is compatible with LVTTL (3.3V) logic levels and is available in industry-standard plastic SOJ and TSOP(II) packages.

Features

• Fast Page Mode Operation: Enables high-speed data access by allowing multiple column accesses within the same row.
• Multiple Refresh Modes: Supports CAS-before-RAS refresh, RAS-only refresh, Hidden refresh, and Self-refresh (L-version only) for flexible power management.
• Fast Parallel Test Mode: Facilitates efficient testing during production.
• LVTTL (3.3V) Compatibility: Inputs and outputs are compatible with 3.3V logic levels.
• Write Operation Flexibility: Supports Early Write or output enable-controlled write modes.
• JEDEC Standard Pinout: Ensures compatibility with industry-standard designs.
• Package Options: Available in Plastic SOJ and TSOP(II) packages for versatile integration.
• Power Supply: Operates at +3.3V ±0.3V for stable performance.

Applications

The K4F660812D is suitable for a wide range of applications, including:

• Computing Systems: Used in desktops, laptops, and servers for temporary data storage.
• Embedded Systems: Ideal for industrial control systems, medical devices, and automotive electronics.
• Networking Equipment: Supports high-speed data buffering in routers, switches, and communication devices.
• Consumer Electronics: Found in smart TVs, gaming consoles, and digital cameras.
• Test and Measurement Instruments: Provides reliable memory for data acquisition and signal processing.

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (Vcc): -0.5V to +4.6V
• Input Voltage (Vin): -0.5V to Vcc + 0.5V
• Output Voltage (Vout): -0.5V to Vcc + 0.5V
• Operating Temperature Range: 0°C to +70°C (Commercial), -40°C to +85°C (Industrial)
• Storage Temperature Range: -55°C to +150°C

Recommended Operating Conditions

• Supply Voltage (Vcc): +3.3V ±0.3V
• Input High Voltage (VIH): 2.0V min
• Input Low Voltage (VIL): 0.8V max
• Operating Temperature: 0°C to +70°C (Commercial), -40°C to +85°C (Industrial)

DC Characteristics

• Input Leakage Current (Iin): ±1µA max
• Output Leakage Current (Iout): ±1µA max
• Standby Current (ISB): 10mA max (L-version with Self-refresh)
• Operating Current (Icc): 120mA max (Active mode)

AC Characteristics

• RAS Access Time (tRAC): 60ns max
• CAS Access Time (tCAC): 15ns max
• Row Precharge Time (tRP): 20ns min
• Write Pulse Width (tWP): 20ns min
• Refresh Cycle Time (tREF): 64ms max

Package Information

Plastic SOJ Package

• Package Dimensions: 400mil width, 1.27mm lead pitch
• Pin Count: 32 pins
• Material: Molded plastic, lead-free and RoHS compliant

TSOP(II) Package

• Package Dimensions: 10.16mm x 20.95mm, 0.5mm lead pitch
• Pin Count: 32 pins
• Material: Molded plastic, lead-free and RoHS compliant

Functional Block Diagram

The K4F660812D features a memory array of 8,388,608 x 8 cells, controlled by RAS (Row Address Strobe), CAS (Column Address Strobe), and Write Enable (W) signals. Address inputs (A0-A12) select the row and column locations, while Vcc and Vss provide power and ground connections. The 4K refresh capability ensures data integrity during operation.

Conclusion

The K4F660812D 8Mx8 Fast Page Mode DRAM is a versatile and reliable memory solution for modern electronic systems. With its advanced features, multiple refresh modes, and industry-standard packaging, it meets the demands of high-performance applications while maintaining low power consumption. Samsung's commitment to quality ensures that this component delivers consistent performance and longevity in a variety of environments.