K4F661612C Datasheet | Next Electromics

Technical Summary: K4F661612C 4Mx16 Fast Page Mode DRAM

Overview

The K4F661612C is a high-performance 4Mx16 Fast Page Mode Dynamic Random Access Memory (DRAM) component manufactured using Samsung's advanced CMOS process technology. This device belongs to a family of DRAMs featuring advanced refresh capabilities and low-power operation. With its 16-bit wide data bus and 4M word capacity, it provides an optimal balance between memory density and access speed for various computing applications.

This component is particularly notable for its multiple refresh modes including CAS-before-RAS, RAS-only, Hidden refresh, and Self-refresh (L-version only). The LVTTL-compatible interface makes it suitable for modern 3.3V systems while maintaining compatibility with standard DRAM controllers.

Key Features

Memory Organization: 4,194,304 words × 16 bits
Operation Mode: Fast Page Mode operation
Byte Control: 2CAS Byte/Word Read/Write operation
Refresh Modes:
- CAS-before-RAS refresh capability
- RAS-only refresh capability
- Hidden refresh capability
- Self-refresh capability (L-version only)
Test Capability: Fast parallel test mode
Interface: LVTTL (3.3V) compatible inputs and outputs
Write Options: Supports Early Write or output enable controlled write
Packaging: Available in Plastic TSOP(II) packages
Power Supply: +3.3V ±0.3V operation

Applications

The K4F661612C is designed for use in a wide range of electronic systems requiring moderate-density DRAM with flexible refresh options:

Embedded computing systems
Industrial control systems
Telecommunications equipment
Networking devices
Consumer electronics
Legacy system upgrades
Test and measurement equipment

Electrical Characteristics

Absolute Maximum Ratings

Supply Voltage (Vcc): -0.5V to +4.6V
Input Voltage (Vin): -0.5V to Vcc + 0.5V
Output Voltage (Vout): -0.5V to Vcc + 0.5V
Operating Temperature: 0°C to +70°C (Commercial)
Storage Temperature: -55°C to +125°C

Recommended Operating Conditions

Supply Voltage (Vcc): 3.0V to 3.6V (3.3V ± 0.3V)
Input High Voltage (VIH): 2.0V min
Input Low Voltage (VIL): 0.8V max
Operating Temperature Range: 0°C to +70°C

DC Characteristics

Input Leakage Current (Iin): ±1μA max
Output Leakage Current (Iout): ±1μA max
Operating Current (Icc1): TBD mA (Active)
Standby Current (Icc2): TBD mA (RAS = VIH)
Refresh Current (Icc3): TBD mA
Self-Refresh Current (Icc4): TBD mA (L-version only)

AC Characteristics

RAS Access Time (tRAC): TBD ns
CAS Access Time (tCAC): TBD ns
CAS Precharge Time (tCP): TBD ns
RAS Precharge Time (tRP): TBD ns
Write Pulse Width (tWP): TBD ns
Refresh Period (tREF): 64ms (4096 cycles)

Package Information

TSOP-II Package Dimensions

Package Type: 44-pin Plastic TSOP-II
Package Width: 10.16mm (nominal)
Package Length: 18.41mm (nominal)
Package Height: 1.20mm (max)
Lead Pitch: 0.80mm
Lead Count: 44 pins

Pin Configuration

The K4F661612C follows standard JEDEC pinout configuration for 4Mx16 DRAM devices. Key signal pins include:

Address Inputs: A0-A11 (12-bit multiplexed address)
Data I/O: DQ0-DQ15 (16-bit bidirectional data bus)
Control Signals:
- RAS (Row Address Strobe)
- CAS (Column Address Strobe)
- UCAS, LCAS (Upper/Lower Byte Control)
- W (Write Enable)
Power: Vcc (3.3V), Vss (Ground)

Functional Description

Memory Architecture

The K4F661612C organizes its 67,108,864 bits of storage as 4,194,304 addressable words of 16 bits each. Internally, the memory array is structured as a matrix of rows and columns, with address multiplexing used to reduce pin count. The device uses a 12-bit address bus (A0-A11) with row and column addresses multiplexed on the same pins.

Refresh Operations

The device supports multiple refresh modes to accommodate different system requirements:

CAS-before-RAS Refresh: The traditional DRAM refresh method initiated by asserting CAS before RAS
RAS-only Refresh: Refresh initiated by RAS assertion alone
Hidden Refresh: Refresh that can occur during active operation
Self Refresh (L-version): Autonomous refresh for low-power applications

Fast Page Mode Operation

The Fast Page Mode allows faster access to multiple columns within the same row by maintaining the row address (RAS active) while changing column addresses (CAS transitions). This significantly reduces access time for sequential memory locations.