BFR96 - RF & Microwave Discrete Low Power Transistor

Overview

The BFR96 is a high-performance RF and microwave discrete low power transistor designed primarily for use in high-gain, low noise, small-signal amplifier applications. Manufactured by Advanced Power Technology, this component offers excellent high-frequency performance with a current-gain bandwidth product (f_T) of 4.5 GHz typical. The BFR96 is particularly suited for applications requiring low noise figure and high power gain in the RF and microwave frequency ranges.

Key Features

• High Current-Gain Bandwidth Product: f_T = 4.5 GHz (typical) @ I_C = 50 mA
• Low Noise Figure: NF = 2.4 dB (typical) @ f = 0.5 GHz
• High Power Gain: G_max = 14.5 dB (typical) @ f = 0.5 GHz
• Designed for high-frequency small-signal amplification
• Optimized for low noise applications
• Suitable for RF and microwave circuits

Applications

The BFR96 is ideal for various RF and microwave applications including:

• Low-noise amplifiers (LNAs)
• RF signal amplification stages
• Microwave communication systems
• Wireless infrastructure equipment
• Satellite communication systems
• Test and measurement equipment
• Radar systems
• Cellular base stations

Electrical Characteristics

All specifications are measured at T_case = 25°C unless otherwise noted.

Static Characteristics

• Collector-Emitter Breakdown Voltage (BV_CEO): [Value] V (Min)
• Collector-Base Breakdown Voltage (BV_CBO): [Value] V (Min)
• Emitter-Base Breakdown Voltage (BV_EBO): [Value] V (Min)
• Collector Cut-off Current (I_CEO): [Value] μA (Max)
• DC Current Gain (h_FE): [Value] @ I_C = [Value] mA

Dynamic Characteristics

• Current-Gain Bandwidth Product (f_T): 4.5 GHz (typical) @ I_C = 50 mA
• Noise Figure (NF): 2.4 dB (typical) @ f = 0.5 GHz
• Maximum Available Gain (G_max): 14.5 dB (typical) @ f = 0.5 GHz
• Output Power (P_out): [Value] dBm (typical)
• Input/Output Impedance: [Value] Ω (typical)

Absolute Maximum Ratings

• Collector-Emitter Voltage (V_CE): [Value] V
• Collector-Base Voltage (V_CB): [Value] V
• Emitter-Base Voltage (V_EB): [Value] V
• Collector Current (I_C): [Value] mA
• Total Power Dissipation (P_tot): [Value] W @ T_case = 25°C
• Operating Junction Temperature (T_j): [Value] °C
• Storage Temperature Range (T_stg): [Value] to [Value] °C

Package Information

The BFR96 is available in the following package:

• Package Type: SOT-23 (Surface Mount)
• Package Dimensions: [Provide detailed dimensions]
• Pin Configuration:
  • Pin 1: Emitter
  • Pin 2: Base
  • Pin 3: Collector
• Weight: [Value] grams (typical)
• Moisture Sensitivity Level (MSL): [Value]
• RoHS Compliance: Yes

Thermal Characteristics

• Thermal Resistance, Junction-to-Case (R_thJC): [Value] °C/W
• Thermal Resistance, Junction-to-Ambient (R_thJA): [Value] °C/W

Ordering Information

• Standard Package: BFR96
• Tape and Reel Option: BFR96G
• Minimum Order Quantity: [Value]
• Packaging Options: Bulk, Tape & Reel

Design Considerations

When designing with the BFR96 transistor, consider the following:

• Proper impedance matching is crucial for optimal RF performance
• Maintain proper thermal management to prevent overheating
• Follow recommended PCB layout guidelines for high-frequency circuits
• Use appropriate DC biasing for desired operating point
• Implement proper RF shielding when necessary

Revision History

Rev A (9/2005): Initial release of datasheet

Manufacturer Information

Advanced Power Technology
140 Commerce Drive
Montgomeryville, PA 18936-1013
Phone: (215) 631-9840
Fax: (215) 631-9855
Website: www.advancedpower.com

Note: Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein.