The Hitachi HM628512B is a high-performance 4-Mbit static RAM (SRAM) organized as 512K words by 8 bits. Manufactured using advanced 0.35 µm Hi-CMOS process technology, this device offers a combination of high density, low power consumption, and reliable performance. The HM628512B is designed for applications requiring fast access times and battery backup capability, making it ideal for embedded systems, industrial controls, and portable electronics.
Available in multiple package options, including 525-mil SOP, 400-mil TSOP TYPE II, and 600-mil plastic DIP, the HM628512B provides flexibility for high-density PCB mounting. Its fully static operation eliminates the need for clock signals or refresh cycles, simplifying system design.
The HM628512B is well-suited for a wide range of applications, including:
The HM628512B is available in three industry-standard packages, providing flexibility for different PCB layouts and assembly processes:
The Hitachi HM628512B is a versatile and high-performance 4-Mbit SRAM that combines speed, low power consumption, and flexible packaging options. Its fully static operation and TTL compatibility make it an excellent choice for a wide range of applications, from industrial controls to portable electronics. With robust electrical characteristics and support for battery backup, the HM628512B is a reliable solution for demanding memory requirements.