Technical Summary: K4E640812C 8Mx8 EDO Mode DRAM

K4E640812C 8Mx8 EDO Mode DRAM

Overview

The K4E640812C is an 8Mx8 Extended Data Out (EDO) Mode DRAM component manufactured by Samsung Electronics Co., Ltd. This high-performance memory device is designed to provide high bandwidth, low power consumption, and high reliability, making it suitable for a variety of computing and embedded applications. Fabricated using Samsung's advanced CMOS process, the K4E640812C supports multiple refresh modes, including CAS-before-RAS, RAS-only, Hidden refresh, and Self-refresh (L-version only).

The device operates with a +3.3V±0.3V power supply and features LVTTL-compatible inputs and outputs, ensuring compatibility with modern low-voltage systems. It is available in industry-standard Plastic SOJ and TSOP(II) packages, making it versatile for different PCB layouts and assembly processes.

Features

Extended Data Out (EDO) Mode Operation: Enhances data transfer efficiency by allowing data to remain valid after CAS deassertion.
Multiple Refresh Capabilities:
- CAS-before-RAS (CBR) refresh
- RAS-only refresh
- Hidden refresh
- Self-refresh capability (available in L-version only)
Fast Parallel Test Mode: Facilitates high-speed testing during manufacturing.
LVTTL (3.3V) Compatibility: Ensures seamless integration with low-voltage systems.
Flexible Write Control: Supports Early Write or Output Enable controlled write operations.
JEDEC Standard Pinout: Ensures compatibility with industry-standard designs.
Package Options: Available in Plastic SOJ and TSOP(II) packages.
Low Power Consumption: Optimized for energy-efficient applications.

Applications

The K4E640812C is designed for a broad range of applications, including but not limited to:

Desktop and Laptop Computers: Used as system memory in PCs and notebooks.
Embedded Systems: Ideal for industrial control systems, medical devices, and automotive electronics.
Networking Equipment: Suitable for routers, switches, and other communication devices.
Consumer Electronics: Used in gaming consoles, set-top boxes, and multimedia devices.
Test and Measurement Instruments: Provides reliable memory for data acquisition and processing.

Electrical Characteristics

Absolute Maximum Ratings

Supply Voltage (V_CC): -0.5V to +4.6V
Input Voltage (V_IN): -0.5V to V_CC + 0.5V
Output Voltage (V_OUT): -0.5V to V_CC + 0.5V
Operating Temperature Range: 0°C to +70°C (Commercial)
Storage Temperature Range: -55°C to +125°C

Recommended Operating Conditions

Supply Voltage (V_CC): +3.3V ± 0.3V
Input High Voltage (V_IH): 2.0V min
Input Low Voltage (V_IL): 0.8V max
Operating Temperature: 0°C to +70°C

DC Characteristics

Input Leakage Current (I_IL): ±1.0 µA max
Output Leakage Current (I_OL): ±1.0 µA max
Standby Current (I_SB): 10 mA max
Operating Current (I_CC): 120 mA max (at f = 66 MHz)

Package Information

Available Packages

Plastic SOJ (Small Outline J-Lead): 400-mil body width, 28-pin configuration.
TSOP(II) (Thin Small Outline Package): 400-mil body width, 28-pin configuration.

Package Dimensions

SOJ Package:
- Body Width: 400 mil
- Lead Pitch: 1.27 mm
- Height: 3.05 mm max
TSOP(II) Package:
- Body Width: 400 mil
- Lead Pitch: 0.8 mm
- Height: 1.2 mm max

Pin Configuration

The K4E640812C follows the JEDEC standard pinout for 8Mx8 DRAM devices. Key pins include:

A0-A12: Address inputs (A0-A11 for row address, A0-A9 for column address with 4K refresh).
DQ0-DQ7: Data input/output lines.
RAS: Row Address Strobe.
CAS: Column Address Strobe.
WE: Write Enable.
OE: Output Enable.
V_CC: Power supply (+3.3V).
V_SS: Ground.

Functional Description

The K4E640812C operates in Extended Data Out (EDO) mode, which allows the data outputs to remain valid after the falling edge of CAS, improving bus utilization. The device supports multiple refresh modes to maintain data integrity:

CAS-before-RAS (CBR) Refresh: Initiated by asserting CAS before RAS.
RAS-only Refresh: Initiated by asserting RAS while holding CAS high.
Hidden Refresh: Combines refresh with a read or write operation.
Self-Refresh (L-version only): Automatically refreshes the memory array without external control signals.

The device also supports Early Write and Output Enable controlled write operations, providing flexibility in system design.

Conclusion

The K4E640812C is a versatile and high-performance 8Mx8 EDO Mode DRAM suitable for a wide range of applications. With its advanced features, low power consumption, and multiple refresh capabilities, it is an excellent choice for designers seeking reliable and efficient memory solutions. Samsung's commitment to quality ensures that this device meets the stringent requirements of modern electronic systems.

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