K4E660412D

K4E660412D 16Mx4 EDO Mode DRAM Technical Summary

Overview

The K4E660412D is a 16Mx4 Extended Data Out (EDO) Mode DRAM component manufactured using Samsung's advanced CMOS process. This high-performance memory device is designed to deliver high bandwidth, low power consumption, and exceptional reliability for demanding applications. The component features multiple refresh modes including CAS-before-RAS, RAS-only, Hidden refresh, and Self-refresh (L-version only), making it suitable for various system requirements. With LVTTL-compatible I/O and operation at +3.3V±0.3V, the K4E660412D offers excellent compatibility with modern low-voltage systems.

Functional Block Diagram

The device architecture consists of a memory array organized as 16,777,216 x 4 cells, controlled by RAS, CAS, and W clocks. Address inputs A0-A12 (with A0-A11 used for 4K refresh) provide access to the memory locations. The design incorporates Samsung's optimized memory array structure for efficient operation in EDO mode.

Key Features

• Extended Data Out Mode Operation: Enables faster memory access cycles by maintaining valid output data after CAS deassertion
• Advanced Refresh Capabilities:
  • CAS-before-RAS refresh
  • RAS-only refresh
  • Hidden refresh
  • Self-refresh capability (L-version only)
• Fast Parallel Test Mode: Accelerates production testing and quality verification
• LVTTL (3.3V) Compatibility: All inputs and outputs are compatible with 3.3V LVTTL levels
• Flexible Write Options: Supports both Early Write and output enable controlled write operations
• Standardized Design: JEDEC standard pinout ensures compatibility across systems
• Package Options: Available in both Plastic SOJ and TSOP(II) packages
• Power Supply: Operates from a single +3.3V±0.3V power source

Applications

The K4E660412D is suitable for a wide range of applications including:

• High-performance computing systems
• Graphics cards and video processing equipment
• Networking and telecommunications equipment
• Industrial control systems
• Embedded systems requiring reliable memory solutions
• Test and measurement equipment
• Medical electronics
• Automotive electronics (non-safety critical applications)

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (Vcc): -0.5V to +4.6V
• Input Voltage (Vin): -0.5V to Vcc+0.5V
• Output Voltage (Vout): -0.5V to Vcc+0.5V
• Operating Temperature Range:
  • Commercial: 0°C to +70°C
  • Industrial: -40°C to +85°C
• Storage Temperature: -55°C to +150°C

Recommended Operating Conditions

• Supply Voltage (Vcc): 3.0V to 3.6V
• Input High Voltage (VIH): 2.0V to Vcc+0.3V
• Input Low Voltage (VIL): -0.3V to 0.8V
• Operating Temperature:
  • Commercial: 0°C to +70°C
  • Industrial: -40°C to +85°C

DC Characteristics

• Input Leakage Current (II): ±1μA max
• Output Leakage Current (IOZ): ±1μA max
• Operating Current (ICC1): 120mA max (active)
• Standby Current (ICC2): 20mA max (RAS = VIH)
• Self Refresh Current (ICC3): 1mA max (L-version only)

AC Characteristics

• RAS Access Time (tRAC): 60ns max
• CAS Access Time (tCAC): 15ns max
• CAS Precharge Time (tCP): 15ns min
• RAS Precharge Time (tRP): 30ns min
• Write Pulse Width (tWP): 25ns min
• Address Setup Time (tAS): 0ns min
• Address Hold Time (tAH): 10ns min

Package Information

SOJ Package (42-pin)

• Package Dimensions: 22.22mm x 10.16mm body
• Lead Pitch: 1.27mm
• Lead Count: 42
• Package Weight: 1.2g typical
• Moisture Sensitivity Level (MSL): 3

TSOP(II) Package (44-pin)

• Package Dimensions: 18.41mm x 10.16mm body
• Lead Pitch: 0.8mm
• Lead Count: 44
• Package Weight: 0.5g typical
• Moisture Sensitivity Level (MSL): 3

Ordering Information

The device is available in different versions and packages:

• K4E660412D-XX: Standard version
• K4E660412D-LXX: Low-power version with self-refresh
• Package options:
  • SOJ: Suffix "F"
  • TSOP(II): Suffix "T"
• Speed grades available: -6 (60ns), -7 (70ns)

Quality and Reliability

Samsung Electronics guarantees the highest quality standards for the K4E660412D DRAM family:

• 100% production tested
• Comprehensive burn-in and reliability testing
• JEDEC standard qualification
• ESD protection: 2000V min (Human Body Model)
• Latch-up immunity: 100mA min

Design Considerations

When implementing the K4E660412D in system designs, consider the following:

• Proper power supply decoupling (0.1μF ceramic capacitor per Vcc pin)
• Signal integrity management for address and control lines
• Thermal management in high-density applications
• Refresh timing requirements based on operating temperature
• Proper termination for high-speed operation

Samsung Electronics Co., Ltd. reserves the right to make changes to products and specifications without notice. For the most current information, please consult the latest datasheet revision.