MAT02 - Low Noise, Low Drift Dual Monolithic NPN Transistor

Overview

The MAT02 series represents a high-performance NPN dual monolithic transistor designed for precision analog applications requiring exceptional noise performance and thermal stability. Manufactured using Precision Monolithics' proprietary Silicon Nitride "Triple-Passivation" process, these devices offer outstanding parameter stability across temperature variations and extended operational lifetimes.

This component is particularly notable for its extremely low offset voltage characteristics, with grades as low as 50 µV maximum, making it ideal for high-precision instrumentation applications. The MAT02 maintains excellent current gain characteristics across a broad collector current range while delivering industry-leading noise performance.

Key Features

• Ultra-low offset voltage: 50 µV maximum for A/E grades, 150 µV maximum for F grade
• Exceptional noise performance: 1.0 nV/√Hz maximum noise voltage at 100 Hz, 1 mA
• High current gain: hFE of 500 minimum at IC = 1 mA (300 minimum at IC = 10 mA)
• Excellent logarithmic conformance: rBE ≤ 0.3 V
• Low offset voltage drift: 0.1 µV/°C maximum
• Wide operating temperature range: -55°C to +125°C
• Improved replacement: Direct upgrade path for LM194/394 designs
• Flexible packaging: Available in TO-78 package and die form

Applications

The MAT02's combination of precision characteristics makes it suitable for demanding analog applications including:

• Precision instrumentation amplifiers
• Low-noise preamplifiers
• Medical instrumentation
• High-accuracy logarithmic amplifiers
• Thermocouple and sensor signal conditioning
• Professional audio equipment
• Military and aerospace systems
• Precision voltage references
• Low-drift differential amplifiers

Electrical Characteristics

All specifications at TA = +25°C unless otherwise noted.

Absolute Maximum Ratings

• Collector-Base Voltage (VCBO): 45 V
• Collector-Emitter Voltage (VCEO): 45 V
• Emitter-Base Voltage (VEBO): 5 V
• Collector Current (IC): 20 mA
• Total Power Dissipation (TA = +25°C): 300 mW
• Operating Temperature Range: -55°C to +125°C
• Storage Temperature Range: -65°C to +150°C

DC Characteristics

• Offset Voltage (VOS):
  • MAT02AH/EH: 50 µV maximum
  • MAT02FH: 150 µV maximum
• Offset Voltage Drift (ΔVOS/ΔT): 0.1 µV/°C maximum
• Current Gain (hFE):
  • At IC = 1 mA: 500 minimum
  • At IC = 10 mA: 300 minimum
• Base-Emitter Voltage (VBE): 0.3 V maximum for logarithmic conformance

AC Characteristics

• Noise Voltage (en):
  • At 100 Hz, IC = 1 mA: 1.0 nV/√Hz maximum
  • At 1 kHz, IC = 1 mA: 0.8 nV/√Hz typical
• Gain-Bandwidth Product (fT): 200 MHz typical

Package Information

TO-78 Metal Can Package

• Package type: Hermetically sealed TO-78 metal can
• Pin configuration:
  • Pin 1: Emitter 1
  • Pin 2: Collector 1
  • Pin 3: Base 1
  • Pin 4: Base 2
  • Pin 5: Collector 2
  • Pin 6: Emitter 2
  • Pin 7: Case (substrate)
• Dimensions: 9.65 mm diameter × 5.59 mm height (excluding leads)
• Weight: Approximately 1.2 grams
• Lead material: Kovar with gold plating
• Case material: Stainless steel

Die Information

• Die dimensions: 0.76 mm × 0.76 mm (30 mil × 30 mil)
• Backside: Electrically isolated substrate
• Surface passivation: Silicon nitride triple-passivation
• Bonding pads: Aluminum metallization

Ordering Information

Note: Burn-in is available on commercial and industrial temperature range parts in TO-can packages. For devices processed in total compliance to MIL-STD-883, add /883 after part number.

Reliability and Qualification

The MAT02 series undergoes rigorous quality control and reliability testing, including:

• 100% electrical testing at temperature extremes
• Burn-in available for high-reliability applications
• MIL-STD-883 compliant processing available
• Hermetic sealing for moisture resistance
• Radiation hardness testing available upon request

Design Considerations

When implementing the MAT02 in precision circuits:

• Maintain proper thermal symmetry between transistor pairs for optimal drift performance
• Consider guard ring techniques for high-impedance circuits
• Minimize temperature gradients across the package
• Use low-thermal EMF connection methods
• For lowest noise, operate in the 0.5-2 mA collector current range
• Ensure proper heat sinking when operating near maximum ratings