The GBSE (gate boost solar engine)

The Gate Boost SE uses a 1381, a 2N7000 MOSFET and a 2N3906 with a unique voltage doubler to increase the voltage applied to the gate of the MOSFET. Normally the 2.6V output of a 1381C is barely able to turn on the 2N7000. As a result the "on resistance" of the MOSFET is high and much power is wasted.

The Gate Boost SE circuit employs a combination of a voltage reference (the 1381), a MOSFET (the 2N7000), and a bipolar junction transistor (the 2N3906) to effectively manage the gate voltage of the MOSFET. The 1381 is a precision voltage reference that typically outputs 2.6 volts. This voltage level is insufficient to fully enhance the 2N7000 MOSFET, leading to a condition where the MOSFET operates in a partially on state, characterized by high on-resistance. This high on-resistance results in increased power dissipation and reduced efficiency within the circuit.

To address this limitation, the circuit incorporates a voltage doubler configuration. The voltage doubler is designed to increase the gate voltage applied to the 2N7000, allowing it to reach a fully enhanced state. This is achieved by utilizing the 2N3906 transistor, which functions as a switch to control the charging and discharging of capacitors within the doubler circuit. When activated, the doubler circuit effectively boosts the voltage seen at the gate of the MOSFET, thereby reducing its on-resistance significantly.

The enhanced gate voltage enables the 2N7000 to operate more efficiently, minimizing power loss and improving overall circuit performance. The careful design of the voltage doubler ensures that the output voltage is stable and adequately supports the operation of the MOSFET under varying load conditions. This enhancement is particularly beneficial in applications where power efficiency is critical, such as in battery-powered devices or systems requiring high reliability.

In summary, the Gate Boost SE circuit exemplifies an innovative approach to optimizing MOSFET performance through the strategic use of a voltage doubler, thereby enhancing efficiency and reducing power wastage in electronic applications.The Gate Boost SE uses a 1381, a 2N7000 MOSFET and a 2N3906 with a unique voltage doubler to increase the voltage applied to the gate of the MOSFET. Normally the 2.6V output of a 1381C is barely able to turn on the 2N7000. As a result the "on resistance" of the MOSFET is high and much power is wasted. 🔗 External reference