HB56UW3272

HB56UW3272ETK 32M x 72 Dynamic RAM Module Technical Summary

Overview

The HB56UW3272ETK is an advanced 8-byte DIMM (Dual In-line Memory Module) designed as an optimized main memory solution for 4 and 8-byte processor applications. This module integrates high-density DRAM technology to deliver reliable performance in computing systems requiring efficient memory management. The module consists of 36 pieces of 64-Mbit DRAM (HM5165405) in TSOP packages and 2 pieces of 16-bit line drivers in TSSOP packages, providing a total capacity of 32M x 72 bits.

The HB56UW3272ETK supports Extended Data Out (EDO) Page Mode, enabling high-speed memory access. Its 168-pin socket-type package (dual lead-out) allows for high-density mounting without requiring surface-mount technology. The module is designed for systems where space efficiency and performance are critical.

Key Features

• 168-pin socket type package (Dual lead-out)
  • Outline: 133.35 mm (Length) × 53.34 mm (Height) × 4.00 mm (Thickness)
  • Lead pitch: 1.27 mm
• Single 3.3V power supply (3.3V ± 0.3V)
• High-speed operation
  • Access time (t_RAC): 50 ns / 60 ns (max)
  • Access time (t_CAC): 18 ns / 20 ns (max)
• Low power consumption
  • Active mode: 8.78 W / 7.49 W (max)
  • Standby mode (TTL): 295.2 mW (max)
• JEDEC standard outline buffered 8-byte DIMM
• Buffered input (except RAS and DQ)
• 4-byte interleave enabled, dual address input (A0/B0) for HB56UW3272ETK-F
• EDO Page Mode capability for enhanced performance
• 4096 refresh cycles (64 ms refresh interval)
• Two refresh variations
  • RAS-only refresh
  • CAS-before-RAS refresh

Applications

The HB56UW3272ETK is designed for use in high-performance computing systems where efficient memory management and high-speed access are essential. Key applications include:

• Workstations and servers requiring 4-byte or 8-byte memory configurations
• Embedded systems with demanding memory bandwidth requirements
• Industrial computing applications where reliability and performance are critical
• Telecommunications infrastructure equipment
• High-performance networking devices

Electrical Characteristics

The HB56UW3272ETK operates under the following electrical specifications:

• Supply Voltage: 3.3V ± 0.3V
• Operating Temperature Range: 0°C to 70°C (commercial grade)
• Power Consumption:
  • Active Mode: 8.78 W (max) for 50 ns variant, 7.49 W (max) for 60 ns variant
  • Standby Mode (TTL): 295.2 mW (max)
• Refresh Requirements:
  • 4096 refresh cycles every 64 ms
  • Supports both RAS-only and CAS-before-RAS refresh modes
• Input/Output Levels: TTL-compatible

Package Information

The HB56UW3272ETK is housed in a 168-pin socket-type package with dual lead-out configuration. Key mechanical specifications include:

• Dimensions: 133.35 mm (Length) × 53.34 mm (Height) × 4.00 mm (Thickness)
• Lead Pitch: 1.27 mm
• Mounting Type: Socket-mounted DIMM (no surface-mount technology required)
• Component Configuration:
  • 36 × 64-Mbit DRAM (HM5165405) in TSOP packages
  • 2 × 16-bit line drivers in TSSOP packages

Ordering Information

The HB56UW3272ETK is available in two speed grades:

• HB56UW3272ETK-5F: 50 ns access time
• HB56UW3272ETK-6F: 60 ns access time

Both variants use the same 168-pin dual lead-out package configuration.

Conclusion

The HB56UW3272ETK represents a high-performance memory solution for demanding computing applications. With its combination of high-density DRAM, EDO Page Mode capability, and efficient power characteristics, this module provides an excellent balance of performance and reliability. The socket-type package design facilitates easy installation and maintenance, making it suitable for a wide range of industrial and commercial applications.