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K4F660811C - 8Mx8 Fast Page Mode DRAM

Overview

The K4F660811C is a high-performance 8Mx8 Fast Page Mode DRAM component manufactured using Samsung's advanced CMOS process. This DRAM is designed to deliver high bandwidth while maintaining low power consumption, making it suitable for a variety of memory-intensive applications. The device features multiple refresh modes, including CAS-before-RAS refresh, RAS-only refresh, and Hidden refresh, ensuring efficient memory management and data retention.

Features

• High-Density Memory: 8Mx8 organization (64Mb total capacity).
• Fast Page Mode Operation: Enables faster access to memory locations within the same row.
• Multiple Refresh Modes: Supports CAS-before-RAS (CBR), RAS-only, and Hidden refresh for efficient memory management.
• Low Power Consumption: Optimized for power efficiency, making it suitable for portable and battery-operated devices.
• Advanced CMOS Process: Fabricated using Samsung's high-performance CMOS technology for reliability and speed.
• High Bandwidth: Designed to support high-speed data transfer requirements.
• 4K Refresh Cycles: Ensures data integrity with periodic refresh cycles.

Applications

The K4F660811C is ideal for a wide range of applications requiring high-density, low-power memory solutions. Key applications include:

• Computing Systems: Used in desktops, laptops, and servers for temporary data storage.
• Embedded Systems: Suitable for industrial and automotive embedded applications.
• Networking Equipment: Provides memory support for routers, switches, and other networking hardware.
• Consumer Electronics: Found in smart TVs, gaming consoles, and multimedia devices.
• Telecommunications: Used in base stations and communication infrastructure.

Electrical Characteristics

Absolute Maximum Ratings

• Supply Voltage (V_CC): -0.5V to +4.6V
• Input Voltage (V_IN): -0.5V to V_CC + 0.5V
• Operating Temperature Range: 0°C to +70°C (Commercial), -40°C to +85°C (Industrial)
• Storage Temperature Range: -55°C to +150°C

Recommended Operating Conditions

• Supply Voltage (V_CC): 3.3V ± 0.3V
• Input High Voltage (V_IH): 2.0V min
• Input Low Voltage (V_IL): 0.8V max
• Operating Frequency: Up to 100MHz (dependent on configuration)

DC Characteristics

• Standby Current (I_SB): 10µA max (typical)
• Operating Current (I_CC): 80mA max (at 100MHz)
• Output High Voltage (V_OH): 2.4V min
• Output Low Voltage (V_OL): 0.4V max

AC Characteristics

• Access Time (t_AA): 60ns max
• RAS Precharge Time (t_RP): 20ns min
• CAS Hold Time (t_CH): 10ns min
• Write Pulse Width (t_WP): 30ns min

Package Information

Physical Dimensions

The K4F660811C is available in a standard 400-mil SOJ (Small Outline J-Lead) package. Key dimensions include:

• Package Type: 28-pin SOJ
• Width: 400 mil (10.16mm)
• Length: 1.070" (27.18mm)
• Height: 0.220" (5.59mm)
• Pin Pitch: 1.27mm (50 mil)

Pin Configuration

The pinout for the 28-pin SOJ package is as follows:

• Pin 1: V_CC (Power Supply)
• Pin 2: DQ0 (Data Input/Output)
• Pin 3: DQ1 (Data Input/Output)
• Pin 4: DQ2 (Data Input/Output)
• Pin 5: DQ3 (Data Input/Output)
• Pin 6: DQ4 (Data Input/Output)
• Pin 7: DQ5 (Data Input/Output)
• Pin 8: DQ6 (Data Input/Output)
• Pin 9: DQ7 (Data Input/Output)
• Pin 10: /WE (Write Enable)
• Pin 11: /RAS (Row Address Strobe)
• Pin 12: /CAS (Column Address Strobe)
• Pin 13: A0 (Address Input)
• Pin 14: A1 (Address Input)
• Pin 15: A2 (Address Input)
• Pin 16: A3 (Address Input)
• Pin 17: A4 (Address Input)
• Pin 18: A5 (Address Input)
• Pin 19: A6 (Address Input)
• Pin 20: A7 (Address Input)
• Pin 21: A8 (Address Input)
• Pin 22: A9 (Address Input)
• Pin 23: A10 (Address Input)
• Pin 24: A11 (Address Input)
• Pin 25: V_SS (Ground)
• Pin 26: NC (No Connection)
• Pin 27: NC (No Connection)
• Pin 28:
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